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LTC2865 LT1033M 7A175 74AUP1G PDTD113E 12864G MSM11B43 PST2401
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  0.5-1.6w Datasheet PDF File

For 0.5-1.6w Found Datasheets File :: 2646    Search Time::2.828ms    
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    CVA3424AT CVA3424 CVA3424A CVA3424T

CALOGIC[Calogic, LLC]
Calogic LLC
Calogic LLC
Part No. CVA3424AT CVA3424 CVA3424A CVA3424T
OCR Text ... 1.4 34 11 MIN TYP 45 1.6 40 13 0.2 MAX 55 1.8 46 15 UNITS mA V V V dB AC ELECTRICAL CHARACTERISTICS VS = 80V, CL = 10pF, Vout = 40Vp-p. ...5 185 5 8 MAX 2.9 2.9 MIN TYP 2.5 2.7 150 5 8 MAX 3.5 3.5 ns ns MHz % % CVA3424 UNITS FIGURE 1. T...
Description    185MHz CRT Driver

File Size 38.41K  /  4 Page

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    MRF175GU MRF175GV

MOTOROLA[Motorola, Inc]
Part No. MRF175GU MRF175GV
OCR Text ...age Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C St...5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage from ...
Description N-CHANNEL MOS BROADBAND RF POWER FETs

File Size 183.29K  /  8 Page

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    MRF175GV MRF175GU

MACOM[Tyco Electronics]
Part No. MRF175GV MRF175GU
OCR Text ...age Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C St...5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage from ...
Description From old datasheet system
N-CHANNEL MOS BROADBAND RF POWER FETs

File Size 210.44K  /  11 Page

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    MRF175LU MRF175LV

MOTOROLA[Motorola, Inc]
Part No. MRF175LU MRF175LV
OCR Text ...Junction to Case Symbol RJC Max 0.65 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ...5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage from ...
Description N-CHANNEL BROADBAND RF POWER FETs

File Size 137.22K  /  8 Page

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    MRF175LV MRF175LU

MACOM[Tyco Electronics]
Part No. MRF175LV MRF175LU
OCR Text ...Junction to Case Symbol RJC Max 0.65 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ...5 1.0 Vdc mAdc Adc (continued) Handling and Packaging -- MOS devices are susceptible to damage from ...
Description N-CHANNEL BROADBAND RF POWER FETs

File Size 143.35K  /  8 Page

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    MRF275G MRF275

MOTOROLA[Motorola, Inc]
Part No. MRF275G MRF275
OCR Text ...age Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25C Derate above 25C St...5 A) Forward Transconductance (VDS = 10 V, ID = 2.5 A) VGS(th) VDS(on) gfs 1.5 0.5 3 2.5 0.9 3.75 4....
Description 150 W, 28 V, 500 MHz N.CHANNEL MOS BROADBAND 100 - 500 MHz RF POWER FET

File Size 224.47K  /  12 Page

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    MRF275 MRF275L

MACOM[Tyco Electronics]
Part No. MRF275 MRF275L
OCR Text ...Junction to Case Symbol RJC Max 0.65 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ...5 1.0 Vdc mAdc Adc NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic char...
Description N-CHANNEL BROADBAND RF POWER FET

File Size 265.53K  /  13 Page

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    SML40B27

SemeLAB
Seme LAB
Part No. SML40B27
OCR Text 0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N-CHANNEL ENHANCEMENT MODE HIG...5.25 (0.215) BSC Pin 1 - Gate Pin 2 - Drain Pin 3 - Source D G S StarMOS is a new ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 21.14K  /  2 Page

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    SML40B28

SemeLAB
Seme LAB
Part No. SML40B28
OCR Text 0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N-CHANNEL ENHANCEMENT MODE HIG...5.25 (0.215) BSC Pin 1 - Gate Pin 2 - Drain Pin 3 - Source D G S StarMOS is a new ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 21.14K  /  2 Page

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    SML40B37

SemeLAB
Seme LAB
Part No. SML40B37
OCR Text 0.185) (0.209) (0.059) (0.098) 6.15 (0.242) BSC 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) N-CHANNEL ENHANCEMENT MODE HIG...5.25 (0.215) BSC Pin 1 - Gate Pin 2 - Drain Pin 3 - Source D G S StarMOS is a new ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 21.13K  /  2 Page

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For 0.5-1.6w Found Datasheets File :: 2646    Search Time::2.828ms    
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