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  1.600.063 Datasheet PDF File

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...600 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 2.6 10 17 34 ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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    APT50M60JN

ADPOW[Advanced Power Technology]
Part No. APT50M60JN
OCR Text ...C = 25C Linear Derating Factor 1 SINGLE DIE ISOTOP(R) PACKAGE All Ratings: TC = 25C unless otherwise specified. APT 50M60JN UNIT Volts...600 800 1000 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 ...
Description POWER MOS IV 500V 71A 0.060 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 60.22K  /  4 Page

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    APT50M60L2VFR

ADPOW[Advanced Power Technology]
Part No. APT50M60L2VFR
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...600 (VGS = 0V, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 2.6 10 17 34 ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 60.66K  /  2 Page

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    APT8015JVFR APT8015

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ADPOW[Advanced Power Technology]
Part No. APT8015JVFR APT8015
OCR Text ...700 5.6 -55 to 150 300 44 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source ...600 900 1200 1500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 ...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm

File Size 77.92K  /  4 Page

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    APT8015 APT8015JVR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Advanced Power Technology, Ltd.
Part No. APT8015 APT8015JVR
OCR Text ... TC = 25C Pulsed Drain Current 1 APT8015JVR UNIT Volts Amps 800 44 176 30 40 700 5.6 -55 to 150 300 44 50 4 Gate-Source Voltag...600 900 1200 1500 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 ...
Description POWER MOS V 800V 44A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 75.34K  /  4 Page

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    APT8018JN

ADPOW[Advanced Power Technology]
Part No. APT8018JN
OCR Text ...C = 25C Linear Derating Factor 1 SINGLE DIE ISOTOP(R) PACKAGE All Ratings: TC = 25C unless otherwise specified. APT 8018JN UNIT Volts ...600 800 1000 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 ...
Description POWER MOS IV 800V 40A 0.18 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 60.06K  /  4 Page

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    APT8024B2FLL APT8024LFLL

ADPOW[Advanced Power Technology]
Part No. APT8024B2FLL APT8024LFLL
OCR Text ... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...600 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 2.0 6.7 13 22 Tj = 125C ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.10K  /  2 Page

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    APT8024JFLL

ADPOW[Advanced Power Technology]
Part No. APT8024JFLL
OCR Text ... TC = 25C Pulsed Drain Current 1 SO ISOTOP (R) 2 T- 27 "UL Recognized" * Increased Power Dissipation * Easier To Drive * Po...600 2.0 6.7 13 22 C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Characteristic Junction ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.21K  /  2 Page

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    APT8028JVR APT5010JVR

ADPOW[Advanced Power Technology]
Part No. APT8028JVR APT5010JVR
OCR Text ... TC = 25C Pulsed Drain Current 1 APT8028JVR UNIT Volts Amps 800 28 112 30 40 500 4 -55 to 150 300 16 30 4 Gate-Source Voltage ...600 750 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0....
Description POWER MOS V 800V 28A 0.280 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 71.26K  /  4 Page

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    APT8030B2VR

ADPOW[Advanced Power Technology]
Part No. APT8030B2VR
OCR Text ... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT8030B2VR UNIT Volts Amps 800 27 108 30 40 520 ...600 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 0 0 0.4 ...
Description POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.13K  /  4 Page

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