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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
IGP06N60T
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| OCR Text |
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500s 5ms DC 0,1A 1V 10V 100V 1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 23)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operati... |
| Description |
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology
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| File Size |
327.84K /
12 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
SGW02N120
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| OCR Text |
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TBD
50s 20ms DC 1V 10V 100V 1000V
150s
500s
4A
0.1A
2A
Ic
0.01A
0A 10Hz
100Hz
1kHz
10kHz
100kHz
f, ...5, VCE = 800V, VGE = +15V/0V, RG = 91)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating ar... |
| Description |
Fast IGBT in NPT-technology
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| File Size |
307.92K /
11 Page |
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it Online |
Download Datasheet |
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Fuji Semiconductors, Inc.
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| Part No. |
ET383
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| OCR Text |
... RBE = 15 ohm IEBO = 1mA VCBO = 1000V VEBO = 10V IC = 2A, VCE = 5V IC = 2A, IB = 400mA IC = 3A, IB1 = 600mA IB2 = -1200mA, RL = 20 ohm Pw = ...5 1.0 4.0 0.8
Thermal characteristics
Item Thermal resistance Symbol Rth(j-c) Test Conditions Ju... |
| Description |
TRANSISTOR,BJT,NPN,800V V(BR)CEO,5A I(C),TO-247VAR
From old datasheet system
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| File Size |
127.49K /
2 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IHW30N100T
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| OCR Text |
...pplications Type IHW30N100T VCE 1000V IC 30A VCE(sat),Tj=25C 1.55V Tj,max 175C Marking H30T100 Package PG-TO-247-3-21
G
E
PG-TO-247...5 ms) Power dissipation, TC = 25C Operating junction temperature Storage temperature Soldering tempe... |
| Description |
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
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| File Size |
356.94K /
12 Page |
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it Online |
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http://
IRF[International Rectifier]
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| Part No. |
IRGPH50M
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| OCR Text |
...5C VGE = 15V, R G = 5.0, VCPK < 1000V -- 32 -- TJ = 150C, -- 21 -- ns IC = 23A, V CC = 960V -- 490 -- VGE = 15V, R G = 5.0 -- 440 -- Energy losses include "tail" -- 10 -- mJ See Fig. 10, 14 -- 13 -- nH Measured 5mm from package -- 1900 -- V... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V @Vge=15V Ic=23A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=23A)
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| File Size |
217.93K /
6 Page |
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it Online |
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Price and Availability
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