| |
|
 |
Analog Devices |
| Part No. |
AD9635-125EBZ
|
| Description |
12 Bit 125MSPS Dual ADCw/seria
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Coilcraft Inc |
| Part No. |
SLC1175-700MEC
|
| Description |
General Purpose Inductor, 0.07uH, 20%, 1 Element, Ferrite-Core, SMD, 4330, CHIP, 4330, HALOGEN FREE AND ROHS COMPLIANT
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Coilcraft Inc |
| Part No. |
SLC1175-700MEB
|
| Description |
General Purpose Inductor, 0.07uH, 20%, 1 Element, Ferrite-Core, SMD, 4330, CHIP, 4330, HALOGEN FREE AND ROHS COMPLIANT
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Motorola
|
| Part No. |
MPX5700
|
| Description |
MPX5700 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
| File Size |
217.93K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Coilcraft Inc |
| Part No. |
SLC1175-700ME
|
| Description |
Power inductor, shielded, 20% tol, SMT, RoHS
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Coilcraft Inc |
| Part No. |
SLC1175-700
|
| Description |
Power inductor, shielded, 20% tol, SMT, RoHS
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Renesas Electronics Corporation |
| Part No. |
NX6351GP31-AZ
|
| Description |
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Philips
|
| Part No. |
SA57000-XX
|
| Description |
CapFREE(TM) 150 mA, low-noise, low dropout regulator with thermal protection
CapFREEE 150 mA, low-noise, low dropout
|
| File Size |
101.05K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Renesas Electronics Corporation |
| Part No. |
NX6351GP29-AZ
|
| Description |
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Renesas Electronics Corporation |
| Part No. |
NX6351GP35-AZ
|
| Description |
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Renesas Electronics Corporation |
| Part No. |
NX6351GP33-AZ
|
| Description |
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| Part No. |
2SC5700
|
| Description |
RF SMALL SIGNAL TRANSISTOR
SH2 Series, 7086 Group, Two ADC circuits, 6-ch 16-bit MTU2, 3-ch 16-bit MTU2S, Port Output Enable, 2-ch CMT, UBC, 5v IO, 15 mA IO, BusTrace, AUD TFP-100B; Vcc= 3.0 to 5.5 volts, Temp= 0 to 50 C; Package: PTQP0100KA-A
Silicon NPN Epitaxial VHF/UHF wide band amplifier
Silicon NPN Transistor
|
| File Size |
98.10K /
10 Page |
View
it Online |
Download Datasheet |
| |
|
|
Renesas Electronics Corporation |
| Part No. |
NX6351GP27-AZ
|
| Description |
270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB Laser Diode for 9.8 Gb/s CPRI and 10G E-PON ONU Application
|
| Tech specs |
|
|
|
Official Product Page
|
|
Bom2Buy.com
Price and Availability
|
