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NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
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| Part No. |
BUJ105AB BUJ105AB_1 BU1506 BUJ105AB118
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| OCR Text |
...erating
VCEsat/V 2.0
1.6 IC=1a 1.2 2A 3A 4A
0.8
0.4
0
20
40
60
80 Tmb / C
100
120
140
0.0 0.01
0.10 ...700v; Vcc = 150V; -Vbe = 5V,3V & 1V; LB = 1H; LC = 200H.
October 2001
5
Rev 1.000
Philip... |
| Description |
From old datasheet system
Silicon Diffused Power Transistor
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| File Size |
62.74K /
7 Page |
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it Online |
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Continental Device India Limited
ETC[ETC]
List of Unclassifed Manufacturers
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| Part No. |
CDL13005 CDL13005A CDL13005B CDL13005C CDL13005E
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| OCR Text |
...IEBO Emitter Cut Off Current IC=1a, VCE=5V *hFE DC Current Gain Ratio Between hFE1 of Low Current and hFE1 IC=5mA, VCE=5V hFE1/hFE2 hFE2 IC=1a, VCE=5V hFE2 of High Current Collector Emitter Saturation Voltage Base Emitter Saturation Voltage... |
| Description |
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 40 - 50 hFE.
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 20 - 31 hFE.
From old datasheet system
NPN PLASTIC POWER TRANSISTOR
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 10 - 21 hFE.
75.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 4.000A Ic, 30 - 41 hFE.
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| File Size |
67.97K /
3 Page |
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it Online |
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NTE[NTE Electronics]
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| Part No. |
NTE5825 NTE5818 NTE5819 NTE5823
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| OCR Text |
...Symbol trr Test Conditions IF = 1a to VR = 30V IFM = 36A, di/dt = 25A/s IRM(REC) IF = 1a to VR = 30V Min - - - Typ 150 200 - Max 200 400 2 Unit ns ns A
.437 (11.1) Max
.250 (6.35) Max .060 (1.52) Dia Min .175 (4.45) Max 10-32 NF-2A
... |
| Description |
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 600V. Non-repetitive peak reverse voltage 660V.
Silicon Power Rectifier Stud Mount, Fast Recovery, 12 Amp
Silicon Power Rectifier Stud Mount Fast Recovery 12 Amp
Silicon power rectifier. Stud mount, fast recovery, 12 Amp. Peak repetitive reverse voltage 200V. Non-repetitive peak reverse voltage 250V.
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| File Size |
17.84K /
2 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IHW30N100R
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| OCR Text |
...
10A
50s 100s 500s
Ic
1a DC 10ms
1kHz
10kHz
100kHz
0.1a 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1....700v
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junctio... |
| Description |
Reverse Conducting IGBT with monolithic body diode
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| File Size |
367.51K /
12 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
IHW30N100T
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| OCR Text |
...
10A
50s 100s 500s
Ic
1a DC 10ms
0.1a 1V
10V
100V
1000V
f, SWITCHING FREQUENCY Figure 1. Collector current as a fun...700v
TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junctio... |
| Description |
Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with anti-parallel diode
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| File Size |
356.94K /
12 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
NTE Electronics, Inc.
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| Part No. |
NTE6037 NTE6036
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| OCR Text |
...25C, IFM = 267A TJ = +25C, IF = 1a to VR = 30V, -dIF/dt = 100A/s TJ = +25C, IF = 267A, -dIF/dt = 25A/s
Maximum Reverse Recovery Charge
QRR
TJ = +25C, IF = 1a to VR = 30V, -dIF/dt = 100A/s TJ = +25C, IF = 267A, -dIF/dt = 25A/s
No... |
| Description |
Silicon Power Rectifier Diode, 85 Amp
Silicon Power Rectifier Diode 85 Amp
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| File Size |
22.97K /
2 Page |
View
it Online |
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Price and Availability
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