1u profile high power density pdf Datasheet P7 Description --- IC-ON-LINE


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1u profile high power density Datasheet PDF File

For 1u profile high power density Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				List of Unclassifed Man...
Part No.	DR127-100-R DR127-150-R DR127-101-R DR127-102-R DR127-1R5-R DR127-220-R DR127-2R2 DR127-2R2-R DR127-330-R DR127-331-R DR127-3R3-R DR127-470-R
Description	high power density, high efficiency, shielded inductors
File Size	1,345.67K / 11 Page	View it Online	Download Datasheet

				Cooper Bussmann, Inc.
Part No.	DR127-2R2-R DR125-330-R DR125-560-R DR74-100-R DR74-101-R DR125-221-R DR127-1R5-R DR127-220-R DR127-330-R DR127-331-R DR127-3R3-R DR127-470-R DR127-471-R
Description	high power density, high Efficiency, Shielded Inductors
File Size	297.43K / 7 Page	View it Online	Download Datasheet

				CREE power
Part No.	W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description	Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
File Size	273.34K / 17 Page	View it Online	Download Datasheet

				LATTICE[Lattice Semiconductor] Lattice Semiconductor, Corp. LATTICE SEMICONDUCTOR CORP
Part No.	ISPLSI2096E-100LQ128 ISPLSI2096E-100LT128 ISPLSI2096E-135LQ128 ISPLSI2096E-135LT128 ISPLSI2096E-180LQ128 ISPLSI2096E-180LT128 2096E
Description	In-SystemProgrammableSuperFASThighdensityPLD In-System Programmable SuperFAST?/a> high density PLD In-System Programmable SuperFAST high density PLD In-System Programmable SuperFAST⑩ high density PLD In-System Programmable SuperFASThigh density PLD EE PLD, 10 ns, PQFP128 In-System Programmable SuperFAST??high density PLD
File Size	139.44K / 11 Page	View it Online	Download Datasheet

				Ohmite Mfg. Co.
Part No.	ARF150
Description	high power density
File Size	127.03K / 2 Page	View it Online	Download Datasheet

				XP power Limited
Part No.	SDC320AD1224
Description	high power density
File Size	401.99K / 4 Page	View it Online	Download Datasheet

				Cooper Electronic
Part No.	SD20-XXX
Description	high power density
File Size	407.16K / 8 Page	View it Online	Download Datasheet

				Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor] http://
Part No.	1024-60LH_883 ISPLSI1024-60LH_883 1024 1024-60LH/883 ISPLSI1024/883 ISPLSI1024-60LH/883 ISPLS1024-60LH883
Description	60 MHz in-system prommable high density PLD In-System Programmable high density PLD EE PLD, 25 ns, PQCC68 :4; Features:Alumunium Foil Polyester/Tinned Copper Braid; Impedance:120ohm RoHS Compliant: Yes
File Size	143.95K / 12 Page	View it Online	Download Datasheet

				LATTICE[Lattice Semiconductor] LATTICE [Lattice Semiconductor] Lattice Semiconductor Corporation Lattice Semiconductor, Corp.
Part No.	ISPLSI2032VL-135LT44I ISPLSI2096VL ISPLSI2096VL-100LT128 ISPLSI2096VL-135LT128 ISPLSI2096VL-165LT128 2096VL
Description	2.5VIn-SystemProgrammableSuperFASThighdensityPLD 2.5V In-System Programmable SuperFAST⑩ high density PLD 2.5V In-System Programmable SuperFAST high density PLD 2.5V In-System Programmable SuperFASThigh density PLD EE PLD, 8 ns, PQFP128 2.5V In-System Programmable SuperFASThigh density PLD EE PLD, 10 ns, PQFP44
File Size	139.51K / 11 Page	View it Online	Download Datasheet

				ST Microelectronics 意法半导 STMicroelectronics
Part No.	M29W640D M29DW323
Description	Excalibur high-Speed Low-power Precision Quad Operational Amplifier 16-SOIC FLASH NOR high density & CONSUMER
File Size	1,807.30K / 15 Page	View it Online	Download Datasheet

For 1u profile high power density Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

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