... Tstg
(Ta=25C)
Ratings -30 -20 -5 -30 250 150 -55 ~ +150 Unit V V V mA mW C C
13.50.5
5.10.2
s Features
0.45 -0.1 1.27
+0...40 80 120 160 200
Collector current IC (mA)
400
-20
IB=-250A -200A
-15 -150A -10 -100...
Description
Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)
...0.3
Unit: mm
8.0+0.5 -0.1 3.20.2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitte...40 -5 -1.5 -3 1.2 150 -55 to +150 Unit V
4.60.2 0.750.1
0.50.1 0.50.1 2.30.2 3 1.760.1
V V A ...
Description
Power Device - Power Transistors - Others Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
...25C)
Ratings -120 -120 -5 -50 -20 250 150 -55 ~ +150 Unit V V V mA mA mW C C
s Absolute Maximum Ratings
Parameter Collector to base vol...40 80 120 160 200 0 -2 -4 -6 -8 -10 -12 0 0 - 0.4 - 0.8 -50 25C Ta=75C -25C
2SA921
IC -- VCE
-6...
Description
Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification)
...* PC * Tj Tstg
2 1
Ratings -20 -16 -6 -2 -3 1 150 -55 to +150
Unit V V V A A W C C
Notes: 1. PW 10 ms, Duty cycle 20% 2. Value o...40
0.4
-20
-0.05 mA
IB = 0 0 50 100 150 Ambient Temperature Ta (C) 0 -2 -4 -6 -8 -10 Col...
...otes: 1. PW 10 ms, Duty cycle 20% 2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25C)
Ite...40 -50 Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics -500 Collector Curre...