...38A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, T J = 150C 100 V GS = 20V nA -100 VGS = -20V 180 ID = -38A 32 nC VDS = -44V 86 V G...200
-VD S , Drain-to-Source V oltage (V)
Q G , Total G ate C harge (nC)
Fig 5. Typical Capa...
Description
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条) -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
... 9.0A 25 VDS = 100V, VGS = 0V A 250 VDS = 80V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 44 ID = 9.0A 6.2 nC VDS = 80V 21 VGS = ...200
4
0 1 10 100
A
0 0 5 10 15 20
FO R TE S T C IR C U IT S E E FIG U R E 1 3
25 30 ...
Description
Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
...x.
-14 -10 -56 3.8 79 0.53 20 250 -8.4 7.9 -5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W W/C V mJ A mJ V/ns C
Thermal Resist...200 100
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150 175
IAS
Startin...
Description
Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A) Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)
....2A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 VGS...200
C rss
4
100
0 1 10 100
A
0 0 5 10
FO R TE S T CIR C U IT S E E FIG U R E 1 ...
Description
-60V Single P-Channel HEXFET Power MOSFET in a TO-262 package -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条) Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
....2A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, T J = 150C 100 V GS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 V ...200
C rs s
4
100
0 1 10 100
A
0 0 5 10
FO R TEST C IR C U IT SEE F IGU R E 1 3
...
Description
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)