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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
KBE00G003M-D411 KBE00G003M-D4110
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| OCR Text |
... 512m bit(64mx8) nand flash*2 / 256m bit(8mx8x4banks) mobile sdram*2 revision history the attached datasheets are prepared and approved b...s web site. http://samsungelectronics.com/semiconductors/products/products_index.html
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| Description |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2
SPECIALTY MEMORY CIRCUIT, PBGA107
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| File Size |
1,254.33K /
89 Page |
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Samsung Electronic
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| Part No. |
K9K2G0816QU0M
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| OCR Text |
256m x 8 bit / 128m x 16 bit nand flash memory revision history the attached data sheets are prepared and approved by samsung electronics...s(max.) - serial access : 50ns(min.) 256m x 8 bit / 128m x 16 bit nand flash memory fast write ... |
| Description |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
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| File Size |
833.94K /
35 Page |
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SAMSUNG[Samsung semiconductor]
Samsung Electronics
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| Part No. |
K5D5657DCM-F015 K5D5657DCM-F0CL
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| OCR Text |
...RY
Multi-Chip Package MEMORY 256M Bit(32Mx8) Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM
Revision History
Revision No. History
...s web site. http://samsungelectronics.com/semiconductors/products/products_index.html The attached d... |
| Description |
MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM
MCP / 256Mb NAND and 256Mb Mobile SDRAM
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| File Size |
1,288.81K /
74 Page |
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http://
ELPIDA[Elpida Memory]
Elpida Memory, Inc.
DRAM
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| Part No. |
EBS21RC2ACNA-7A EBS21RC2ACNA EBS21RC2ACNA-75
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| OCR Text |
256M words x 72 bits, 2 banks)
Description
The EBS21RC2ACNA is 256M words x 72 bits, 2 banks Synchronous Dynamic RAM Registered Module, mo...s) Self refresh 128M x 2 x2 1 CLK 1, 2, 4, 8 4 2, 3 0 0 Registered VDD 10% CL = 2*5
24
25
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| Description |
2GB Registered SDRAM DIMM
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| File Size |
142.42K /
15 Page |
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Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
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| Part No. |
HY27UG164GDM-UPEB HY27UG084GDM-UPEB HY27UG164G2M-TPCP HY27UG164G2M-TPIP HY27UG164G2M-TPES
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| OCR Text |
256m x16bit) nand flash document title 4gbit (512mx8bit / 256mx 16bit) nand flash memory revision history revision no. history draft date re...s t c o n di t io n s ( i li, i lo ) before vin=vout=0 to 3.6v after vin=vout=0 to vcc (max)
rev... |
| Description |
256M X 16 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
512M X 8 FLASH 3.3V PROM, 30 ns, PBGA52 12 X 17 MM, 0.65 MM HEIGHT, LEAD FREE, ULGA-52
256M X 16 FLASH 3.3V PROM, 30 ns, PDSO48
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| File Size |
452.53K /
54 Page |
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