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Mitsubishi Electric Sem...
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Part No. |
RM400DG-90F
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OCR Text |
...ery energies [j/pulse] v cc = 2800v, l s = 150nh t j = 125c, inductive load reverse recovery characteristics (typical) 0.0 0.5 1.0 1.5 2.0 0 100 200 300 400 500 600 700 800 forward current [a] reverse recovery energies [j/pulse] v c... |
Description |
HIGH POWER SWITCHING USE INSULATED
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File Size |
168.46K /
5 Page |
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it Online |
Download Datasheet
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Powerex Power Semicondu...
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Part No. |
QID4515004
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OCR Text |
...total gate charge q g v cc = 2800v, i c = 150a, v ge = 15v 1 .5 c emitter-collector voltage** v ec i e = 150a, v ge = 0v, t j = 25c 2.8 v olts i e = 150a, v ge = 0v, t j = 125c 3.2 3.8 volts * pul... |
Description |
Dual IGBT
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File Size |
574.44K /
7 Page |
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it Online |
Download Datasheet
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Powerex Power Semicondu...
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Part No. |
QID4520002
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OCR Text |
...total gate charge q g v cc = 2800v, i c = 200a, v ge = 15v 2.25 c emitter-collector voltage** v ec i e = 200a, v ge = 0v, t j = 25c 2.5 volts i e = 200a, v ge = 0v, t j = 125c 2.8 3.4 volts * pulse wi... |
Description |
Dual IGBT
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File Size |
481.96K /
6 Page |
View
it Online |
Download Datasheet
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Price and Availability
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