|
|
![](images/bg04.gif) |
DIODES[Diodes Incorporated]
|
Part No. |
DMN5L06K-7 DMN5L06K
|
OCR Text |
...1.2
TA = 25 C Pulsed
ID = 280ma
ID = 140mA
1
TA = 25 C TA = -25 C
TA = -55 C
1.0 0.8 0.6 0.4 0.2
0.1 0.001 0.01 0.1 1
0 0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance v... |
Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
File Size |
130.30K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
DIODES[Diodes Incorporated]
|
Part No. |
DMN5L06WK-7 DMN5L06WK
|
OCR Text |
...1.2
TA = 25 C Pulsed
ID = 280ma
ID = 140mA
1
TA = 25 C TA = -25 C
TA = -55 C
1.0 0.8 0.6 0.4 0.2
0.1 0.001 0.01 0.1 1
0 0 2 4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance v... |
Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
File Size |
130.12K /
5 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
DIODES[Diodes Incorporated]
|
Part No. |
DMN5L06W DMN5L06W-7
|
OCR Text |
...= 0 C TA = -25 C
3 2 1
ID = 280ma ID = 140mA
0.1 0.001 0.01 0.1 1
0 0 5 10 15 20
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
2.5 2.3 2.1 1.9
ID = 280ma
VGS = 10V Pulsed
VGS, GATE SOURC... |
Description |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
File Size |
122.63K /
4 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
TSC[Taiwan Semiconductor Company, Ltd]
|
Part No. |
TS13002ACTB0 TS13002A TS13002ACTA3
|
OCR Text |
...10V, IC = 100mA VCE = 10V, IC = 280ma VCE = 10V, IC = 0.1A VCB = 10V, f = 0.1MHz VCC = 125V, IC = 100mA, IB1 = IB2 = 20mA, RL = 125ohm
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT)1 VCE(SAT)2 hFE1 hFE2 hFE3 fT Cob tON tSTG tf
Min
700 4... |
Description |
High Voltage NPN Transistor
|
File Size |
143.99K /
2 Page |
View
it Online |
Download Datasheet
|
|
|
![](images/bg04.gif) |
ZETEX[Zetex Semiconductors]
|
Part No. |
ZXM41N10F
|
OCR Text |
...S =0V, f=1MHz
V DD 30V, I D =280ma
Turn-off delay time (2)(3) Fall time (2)(3)
NOTES: (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns r... |
Description |
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET
|
File Size |
91.91K /
2 Page |
View
it Online |
Download Datasheet
|
|
![](images/findchips_sm.gif)
Price and Availability
|