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Wuxi NCE Power Semicond...
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| Part No. |
NCE70R900I NCE70R900K
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| OCR Text |
...leakage current i gss v gs =30v,v ds =0v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2.5 3 3.5 v drain-source...0 3 nce70r900i nce70r900k typical electrical and therma l characteristics (curves) figure1. s... |
| Description |
N-Channel Super Junction Power MOSFET
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| File Size |
595.52K /
8 Page |
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it Online |
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Taiwan Semiconductor Co...
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| Part No. |
TPMR10D
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| OCR Text |
...e i f =1a, di/dt=-50a/ s, v r =30v i f =0.5a, i r =1a, i rr =0.25a typical junction capacitance (4) c/w peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 150 maximum instantaneous forward voltage (... |
| Description |
10A, 200V - 600V High Current Density Switchmode Ultrafast Surface Mount Rectifiers
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| File Size |
403.23K /
4 Page |
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it Online |
Download Datasheet |
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Taiwan Semiconductor Co...
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| Part No. |
TPUH6J
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| OCR Text |
...a i f =1a, di/dt=-50a/ s, v r =30v 200 10 45 25 maximum reverse current @ rated vr t j =25c ...0 2 4 6 8 0 25 50 75 100 125 150 175 average forward current (a) lead temperature ( o c) fig.1 maxim... |
| Description |
Surface Mount Ultrafast Rectifiers
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| File Size |
372.56K /
4 Page |
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it Online |
Download Datasheet |
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Wuxi NCE Power Semicond...
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| Part No. |
NCE80R1K2I
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| OCR Text |
...leakage current i gss v gs =30v,v ds =0v 100 na gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 2.5 3 3.5 v drain-source...0.85 1.2 v reverse recovery time t rr 240 ns reverse recovery charge q rr 2.2 uc peak rev... |
| Description |
N-Channel Super Junction Power MOSFET
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| File Size |
593.08K /
8 Page |
View
it Online |
Download Datasheet |
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