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  320.1 Datasheet PDF File

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    DS2501

Advanced Monolithic Sys...
Advanced Monolithic Systems
Part No. DS2501
OCR Text ...2.525 2.879 2.867 3.018 3.030 3.320 3.333 3.521 3.535 5.030 5.050 3 Units V V V V V V V V V V V V V V V V V V mV Output Voltage AMS2501/AMS2502-1.5 AMS2501/AMS2502-1.8 AMS2501/AMS2502-2.5 AMS2501/AMS2502-2.85 AMS2501/AMS2502-3....
Description 1A VERY LOW DROPOUT VOLTAGE REGULATORS

File Size 72.69K  /  8 Page

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    EM85000 EM85001

ELAN Microelctronics Corp .
ELAN Microelectronics Corp
Part No. EM85000 EM85001
OCR Text ... 0 --------1KHz 1 1.5875 2.5KHz 320 2 3.175 5KHz 4 6.35 10KHz 0 --------1KHz 1 1.27 2.5KHz 400 2 2.54 5KHz 4 5.08 10KHz 0 --------1KHz 1 0.907 2.5KHz 560 2 1.814 5KHz 4 3.632 10KHz Formula:speed=[ ( dots / DPI ) * 2.54 ) ] / Tb. EX:dot=1,DP...
Description APPLE DESKTOP BUS MOUSE CONTROLLER

File Size 133.18K  /  9 Page

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    HBAT54C HBAT54S HBAT54A HBAT54

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelect...
Part No. HBAT54C HBAT54S HBAT54A HBAT54
OCR Text ...ured at IR=1mA Min. 30 Max. 240 320 400 500 1000 2.0 10 5 Unit V mV mV mV mV mV uA pF nS Forward Voltage Reverse Current Total Capacit...1 0.1 1 10 100 Forward Voltage-VF (mV) Reverse Biased Voltage-VR (V) HBAT54, HBAT54A, HBAT5...
Description Silicon Schottky Barrier Double Diodes

File Size 22.64K  /  3 Page

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    HE8050

Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HE8050
OCR Text ... B 85-160 C 120-200 D 160-320 E 250-500 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve ...1 1 10 100 1000 10000 10 0.1 1 10 100 1000 10000 Collector Current (mA) Collector Current (...
Description NPN EPITAXIAL PLANAR TRANSISTOR

File Size 35.35K  /  3 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ... 20V nA --- -200 VGS = -20V 210 320 ID = 85A 45 68 nC VDS = 60V 73 110 VGS = 10V 22 --- VDD = 38V 130 --- ID = 85A ns 84 --- RG = 1.8 86 --- VGS = 10V D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die contac...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...Figure 11) MIN - TYP 1300 320 69 5.0 MAX - UNITS pF pF pF nH Internal Source Inductance LS G LS S 12.5 - nH ...1.0 30 oC/W oC/W Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Cu...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF2804S-7P

IRF[International Rectifier]
Part No. IRF2804S-7P
OCR Text ...) Pulsed Drain Current Max. 320 230 160 1360 330 2.2 20 630 1050 See Fig.12a,12b,15,16 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A c Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage S...
Description AUTOMOTIVE MOSFET

File Size 260.32K  /  10 Page

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    IRF3007

IRF[International Rectifier]
Part No. IRF3007
OCR Text ...2 or M3 screw Max. 80 56 75 320 200 1.3 20 280 946 See Fig.12a, 12b, 15, 16 -55 to + 175 Units A W W/C V mJ A mJ C 300 (1.6mm from case ) 1.1 (10) N*m (lbf*in) Thermal Resistance Parameter RJC RCS RJA Junction-to-Case...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 146.42K  /  9 Page

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    IRF36 IRF-36

VISAY[Vishay Siliconix]
Part No. IRF36 IRF-36
OCR Text ...0.796 SELFRES. FREQ. MIN. (MHz) 320 320 320 320 300 300 300 280 250 230 210 172 140 140 131 121 110 100 94 86 80 74 68 53 45 34 20 14 9.9 7....1.95 1.85 1.40 RATED DCR DC MAX. CURRENT () (mA) 0.15 0.16 0.17 0.19 0.21 0.24 0.28 0.32 0.36 0.41 0...
Description Inductors Epoxy Conformal Coated, Axial Leaded

File Size 113.79K  /  1 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ... SEE FIGURE 13 160 200 240 280 320 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Dr...1 100us 100 1ms 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 2.0 2.4 10 TC = 25 C ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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