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  4-12.4 Datasheet PDF File

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    TX6.9-4-5.1 TX6.9/5.1-H2-A14 TX6.9/5.1-M2-A112 TX6.9/5.1-M2-A14 TX6.9/5.1-H2-A33 TX6.9/5.1-H2-A8 TX6.9/5.1-H2-A81 TX6.9/

Ferroxcube International Holding B.V.
Part No. TX6.9-4-5.1 TX6.9/5.1-H2-A14 TX6.9/5.1-M2-A112 TX6.9/5.1-M2-A14 TX6.9/5.1-H2-A33 TX6.9/5.1-H2-A8 TX6.9/5.1-H2-A81 TX6.9/5.1-H2-A70 TX6.9/5.1-H2-A89 TX6.9/5.1-M2-A33 TX6.9/5.1-M2-A166 TX6.9/5.1-M2-A81 TX6.9/5.1-S7-A50 TX6.9/5.1-S7-A70 TX6.9/5.1-S7-A42 TX6.9/5.1-S7-A33 TX6.9/5.1-M2-A70 TX6.9/5.1-M2-A89 TX6.9/5.1-M2-A95 TX6.9/4/5.1
OCR Text 4/5.1 Alloy powder toroids New data 2008 Sep 01 Ferroxcube Alloy powder toroids RING CORES (TOROIDS) Effective core parameters SYMB...12 % 42 12 % 50 12 % 70 12 % High-Flux 88% 14 8 % 33 8 % 70 8 % 81 8 % 89 8 % 2008 Sep 01 i ...
Description Alloy powder toroids

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    Infineon
Part No. BUZ100S-4
OCR Text 4 SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Avalanche-rated * dv/dt rated Type BUZ 100S-4 VDS 55 V ID ...12 10 8 RDS (on) 0.050 0.045 0.040 0.035 0.030 c b d e f g h i 0.025 0.020 0.015 0.010 V...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor

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    BUZ100SL-4

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Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
Part No. BUZ100SL-4
OCR Text 4 SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Logic level * Avalanche-rated * dv/dt rated Type BUZ 100SL-4 V...12 10 8 e f g h i b 6 j k 4 bl f hg ij c d e 2 0 a 0.0 0.5 1.0 1.5 2.0...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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    BUZ101SL-4

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Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
Part No. BUZ101SL-4
OCR Text 4 SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Logic level * Avalanche-rated * dv/dt rated Type BUZ 101SL-4 V...12 0.10 c c d e f g h i j 0.08 0.06 0.04 VGS [V] = d e gf h ki j b k l 0.02 a ...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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    BUZ102S-4

SIEMENS AG
Infineon Technologies AG
Part No. BUZ102S-4
OCR Text 4 SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Avalanche-rated * dv/dt rated Type BUZ 102S-4 VDS 55 V ID ...12 mH, Tj = 25 C Reverse diode dv/dt kV/s IS = 6.4 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C...
Description 6.4 A, 55 V, 0.028 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS ? Power Transistor
Quad-Channel SIPMOS Power Transistor

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    Infineon
Part No. BUZ103S-4
OCR Text 4 SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Avalanche-rated * dv/dt rated Type BUZ 103S-4 VDS 55 V ID ...12 A 10 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 0.14 ...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor

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    MINI[Mini-Circuits]
Part No. SCA-4-15-75
OCR Text 4 Way-0 75 Maximum Ratings Operating Temperature Storage Temperature Power Input (as a splitter) Internal Dissipation -40C to 85C -55C to ...12 7.16 7.25 7.25 7.26 7.36 7.52 7.62 7.92 Amp. Unbal. (dB) 0.40 0.26 0.24 0.22 0.23 0.21 0.22 0...
Description Power Splitter/Combiner 4 Way-075з 10 to 1500 MHz 10 MHz - 1500 MHz RF/MICROWAVE COMBINER, 2.8 dB INSERTION LOSS
Power Splitter/Combiner 4 Way-0 75 10 to 1500 MHz
Power Splitter/Combiner 4 Way-0∑ 75з 10 to 1500 MHz
Power Splitter/Combiner 4 Way-0° 75 10 to 1500 MHz

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    BUZ103SL-4

Siemens Semiconductor Group
SIEMENS AG
Infineon Technologies AG
Part No. BUZ103SL-4
OCR Text 4 SIPMOS (R) Power Transistor * Quad-channel * Enhancement mode * Logic level * Avalanche-rated * dv/dt rated Type BUZ 103SL-4 V...12 mH, Tj = 25 C Reverse diode dv/dt kV/s IS = 4.8 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
4.8 A, 55 V, 0.055 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28

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    CFJ-4-101A CFJ-4-101B CFJ-4-102A CFJ-4-240B CFJ-4-330A CFJ-4-470A CFJ-4-470B CFJ-4-471A CFJ-3-222A CFJ-3-332A CFJ-3-681A

Nuvotem Talema
Part No. CFJ-4-101A CFJ-4-101B CFJ-4-102A CFJ-4-240B CFJ-4-330A CFJ-4-470A CFJ-4-470B CFJ-4-471A CFJ-3-222A CFJ-3-332A CFJ-3-681A CFJ-3-152A CFJ-3-101A CFJ-3-102A CFJ-3-240A CFJ-3-470B CFJ-3-471A CFJ-3-472A CFJ-4-472A
OCR Text ... A A A A A A A Quad chokes * 4 w indings per core C FJ-4-330A C FJ-4-470A C FJ-4-101A C FJ-4-471A C FJ-4-102A C FJ-4-472A 4 4 4 4 4 4 33...12.50) (7.30) 0.047 (1.20) 3 x 0.100 (3 x 2.54) 0.378 (9.60) 0.283 0.244 (7.20) (6.20) 0.49...
Description Compact SMD Common Mode Chokes

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    MINI[Mini-Circuits]
Part No. SCA-4-10
OCR Text 4 Way-0 50 Maximum Ratings Operating Temperature Storage Temperature Power Input (as a splitter) Internal Dissipation -40C to 85C -55C to ...12 1.12 1.14 1.16 1.20 1.25 1.38 1.30 1.28 1.26 1.26 1.23 1.20 1.18 1.12 1.06 1.03 1.06 1.09 1.13...
Description Power Splitter/Combiner 4 Way-050з 5 to 1000 MHz 5 MHz - 1000 MHz RF/MICROWAVE COMBINER, 2.5 dB INSERTION LOSS
Power Splitter/Combiner 4 Way-0∑ 50з 5 to 1000 MHz
Power Splitter/Combiner 4 Way-0° 50?/a> 5 to 1000 MHz

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