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NXP Semiconductors N.V.
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Part No. |
BTA416Y-600C
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OCR Text |
...; see figure 11 -0.71.5v v d =400v; i t = 0.1 a; t j = 150 c 0.25 0.4 - v i d off-state current v d =600v; t j = 125 c - 0.1 0.5 ma v d =6...16a; dv com /dt = 20 v/s; (without snubber condition); gate open circuit 10--a/ms v d =400v; t j =... |
Description |
3Q Hi-Com Triac
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File Size |
157.74K /
14 Page |
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NXP Semiconductors N.V.
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Part No. |
BTA416Y-800B
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OCR Text |
...c; see figure 11 -0.71.5v v d =400v; i t = 0.1 a; t j = 150 c 0.25 0.4 - v i d off-state current v d =800v; t j = 125 c - 0.1 0.5 ma v d =8...16a; dv com /dt = 20 v/s; (without snubber condition); gate open circuit 15--a/ms v d =400v; t j =... |
Description |
3Q Hi-Com Triac
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File Size |
154.70K /
13 Page |
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it Online |
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NXP Semiconductors N.V.
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Part No. |
BTA416Y-800C
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OCR Text |
...c; see figure 11 -0.71.5v v d =400v; i t = 0.1 a; t j = 150 c 0.25 0.4 - v i d off-state current v d =800v; t j = 125 c - 0.1 0.5 ma v d =8...16a; dv com /dt = 20 v/s; (without snubber condition); gate open circuit 10--a/ms v d =400v; t j =... |
Description |
3Q Hi-Com Triac
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File Size |
154.71K /
13 Page |
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it Online |
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Advanced Power Technology, Ltd.
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Part No. |
APT8DQ60KCT APT8DQ60KCTG
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OCR Text |
...a, di f /dt = -200a/ s v r = 400v, t c = 25 c i f = 8a, di f /dt = -200a/ s v r = 400v, t c = 125 c i f = 8a, di f /dt = -100...16a t rr q rr q rr t rr i rrm 120 100 80 60 40 20 0 14 12 10 8 6 4 2 0 duty cycle = 0.5 t j = 17... |
Description |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE 超快软恢复整流二极管
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File Size |
119.54K /
4 Page |
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Fairchild Semiconductor Corporation
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Part No. |
FDA16N50F109
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OCR Text |
... ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v...16a r g = 25 (note 4, 5) -- 40 90 ns t r turn-on rise time -- 150 310 ns t d(off) turn-off delay t... |
Description |
500V N-Channel MOSFET
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File Size |
298.84K /
9 Page |
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it Online |
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Price and Availability
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