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California Eastern Laboratories
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Part No. |
NE5511279A-T1A-A NE5511279A-T1-A
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OCR Text |
...ed efficiency: add = 48% typ., f = 900 mhz, v ds = 7.5 v, add = 50% typ., f = 460 mhz, v ds = 7.5 v, ? high linear gain: g l = 15.0 db typ., f = 900 mhz, v ds = 7.5 v, g l = 18.5 db typ., f = 460 mh... |
Description |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET
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File Size |
233.53K /
4 Page |
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it Online |
Download Datasheet |
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Infineon Technologies
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Part No. |
16N50C3
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OCR Text |
...limited by t j ma x i d p uls 48 48 a avalanche energy, single pulse i d =8, v dd =50v e as 460 460 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =16a, v dd =50v e ar 0.64 0.64 avalanche current, repetitive t ar lim... |
Description |
Search --To SPP16N50C3
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File Size |
401.47K /
13 Page |
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it Online |
Download Datasheet |
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Price and Availability
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