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![ESD8V0L2B-03LRH ESD8V0L1B-02LRH ESD8V0L09](Maker_logo/infineon_technologies_ag.GIF)
Infineon Technologies AG EUPEC GMBH ?CO KG
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Part No. |
ESD8V0L2B-03LRH ESD8V0L1B-02LRH ESD8V0L09
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Description |
Low Capacitance tvS Diode bidirectional, 2 ELEMENT, silicon, tvS DIODE ROHS COMPLIANT, TSLP-3-1, 3 PIN bidirectional, 2 ELEMENT, silicon, tvS DIODE ROHS COMPLIANT, TSLP-3-7, 3 PIN bidirectional, silicon, tvS DIODE ROHS COMPLIANT, TSLP-2-17, 2 PIN
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File Size |
562.57K /
9 Page |
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![ESD8V0R1B-02LRH ESD8V0R1B-02LRHE6327 ESD8V0R1B-02LSE6327](Maker_logo/infineon_technologies_ag.GIF)
EUPEC GMBH ?CO KG Infineon Technologies AG
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Part No. |
ESD8V0R1B-02LRH ESD8V0R1B-02LRHE6327 ESD8V0R1B-02LSE6327
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Description |
bidirectional, silicon, tvS DIODE 0.62 X 0.32 MM, 0.31 MM HEIGHT, ROHS COMPLIANT, TSLP-2-7, 2 PIN bidirectional, silicon, tvS DIODE ROHS COMPLIANT, TSLP-2-17, 2 PIN Bi-directional Low Capacitance tvS Diode
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File Size |
606.38K /
7 Page |
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it Online |
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Motorola
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Part No. |
2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N6075
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Description |
Sensitive gate triac. silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Sensitive gate triac. silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Sensitive gate triac. silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
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File Size |
217.63K /
5 Page |
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it Online |
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Price and Availability
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