7.5-12ghz pdf Datasheet P7 Full Text Search --- IC-ON-LINE


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7.5-12ghz Datasheet PDF File

For 7.5-12ghz Found Datasheets File :: 305 Search Time::1.188ms
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				MICROSEMI[Microsemi Corporation]
Part No.	MPL4700 MPP4204 MPP4201 MPP4202 MPP4203
OCR Text	...ications !" GHz Wireless LANS 5.7 !" Solid State Switches, Attenuators, Limiters !" Phase Shifters !" Widest bandwidth of any commercial surface mounted devices !" Handles up to 10 watts incident RF power !" Ultra tight parametric distribut...
Description	MONOLITHIC MICROWAVE SURFACE MOUNT MICRO-PAK PIN DIODES
File Size	62.78K / 3 Page	View it Online	Download Datasheet

				AVAGO TECHNOLOGIES LIMITED
Part No.	AMMC-6220 AMMC-6220-W10 AMMC-6220-W50
OCR Text	... V mA dBm C C C Min. Max. 7 NA 100 15 +150 -65 +150 +300 MaximumAssemblyTemp(60secmax) Note: 1. Operationinexcessofanyoneo...5] (TA= 25C, Vd=3.0 V, Id(Q)=55 mA, Zo=50 ) Symbol Gain NF Parameters and Test Conditions Small-sign...
Description	6 - 20 GHz Low Noise Amplifier
File Size	830.11K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor
Part No.	EFA080A-100F
OCR Text	7.5dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIG...5 32 MAX UNIT dBm dB % 130 90 210 120 -2.0 -15 -14 58* 300 mA mS -3.5 V V V ...
Description	Low Distortion GaAs Power FET
File Size	26.15K / 2 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Excelics Semiconductor, Inc. ETC List of Unclassifed Manufacturers
Part No.	EFA080A-70
OCR Text	...E +23.5dBm TYPICAL OUTPUT POWER 7.0 dB TYPICAL POWER GAIN AT 12GHz 0.3 X 800 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPIT...5 6.0 TYP 23.5 23.5 7.0 4.5 30 130 90 210 120 -2.0 -15 -14 135* o MAX UNIT dBm dB % 300 ...
Description	Low Distortion GaAs Power FET
File Size	18.68K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor, Inc.
Part No.	EFA080A
OCR Text	... 24.0 8.0 TYP 26.0 26.0 10.0 7.5 35 MAX UNIT dBm dB % 130 90 210 120 -2.0 300 mA mS -3.5 V V V o Drain Breakdown Voltage Igd=1.0mA Source Breakdown Voltage Igs=1.0mA Thermal Resistance (Au-Sn Eutectic Attach) ...
Description	8-12V low distortion GaAs power FET
File Size	28.54K / 2 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	EFA480B
OCR Text	...(Au-Sn Eutectic Attach) -12 -7 -15 -14 10 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS2 Drain-Source Vo...5.000 5.500 6.000 6.500 7.000 7.500 8.000 8.500 9.000 9.500 10.000 Note: 8V, 1/2 Idss --- S11 --...
Description	Low Distortion GaAs Power FET
File Size	24.11K / 2 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semicon... Mitsubishi Electric Semiconductor
Part No.	MGF4934AM07 MGF4934AM
OCR Text	... Gs 12 11 10 9 NF 8 7 6 5 4 5 10 15 20 Drain Current, ID (mA) MITSUBISHI (3/6) Associated Gain, Gs (dB) July/2007 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM SUPER LOW NOISE InGaAs HEMT (4pin fla...
Description	SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
File Size	132.86K / 6 Page	View it Online	Download Datasheet

				http:// RFMD[RF Micro Devices]
Part No.	NBB-310-D NBB-310-PCBA-41X NBB-310-T1 NBB-31007 NBB-X-K1 NBB-310
OCR Text	... f=0.1GHz to 8.0GHz f=0.1GHz to 7.0GHz f=7.0GHz to 10.0GHz f=10.0GHz to 12.0GHz Gain Flatness, GF Input and Output VSWR Bandwidth, BW Output Power @ -1dB Compression, P1dB 12.0 13.8 15.2 14.5 12.0 GHz dBm dBm dBm dBm dB dBm dB 4...
Description	CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz
File Size	277.29K / 12 Page	View it Online	Download Datasheet

For 7.5-12ghz Found Datasheets File :: 305 Search Time::1.188ms
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