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NXP Semiconductors N.V.
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Part No. |
ACTT6X-800E
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OCR Text |
...1.5v i d off-state current v d =800v; t j =25c --10a v d =800v; t j = 125 c - - 0.5 ma dv d /dt rate of rise of off-state voltage v dm =536...6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure ... |
Description |
AC Thyristor Triac power switch
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File Size |
149.09K /
14 Page |
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NXP Semiconductors N.V.
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Part No. |
ACTT6G-800E
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OCR Text |
...1.5v i d off-state current v d =800v; t j =25c --10a v d =800v; t j = 125 c - - 0.5 ma dv d /dt rate of rise of off-state voltage v dm =536v...6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure ... |
Description |
AC Thyristor Triac power switch
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File Size |
846.78K /
14 Page |
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it Online |
Download Datasheet
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
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Part No. |
APT10090SFLL APT10090BFLL APT10090BFLL_03 APT10090BFLL03
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OCR Text |
...te Voltage Drain Current (VDS = 800v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = V...6a
D
25
1.30 1.20
20 15
TJ = +125C TJ = +25C
1.10
VGS=10V VGS=20V
10
VDS> ID ... |
Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
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File Size |
94.01K /
5 Page |
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it Online |
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NXP Semiconductors N.V.
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Part No. |
ACTT6B-800E
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OCR Text |
...1.5v i d off-state current v d =800v; t j =25c --10a v d =800v; t j = 125 c - - 0.5 ma dv d /dt rate of rise of off-state voltage v dm =536...6a; dv com /dt = 20 v/s; (snubberless condition); gate open circuit; see figure 14 ; see figure ... |
Description |
AC Thyristor Triac power switch
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File Size |
143.64K /
14 Page |
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it Online |
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Sanyo
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Part No. |
2SC4429
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OCR Text |
800v/8A Switching Regulator Applications
Features
* High breakdown voltage, high reliability. * Fast switching speed (tf : 0.1s typ). * Wi...6a VCE=5V, IC=3A 10 8 Conditions Ratings min typ max 10 10 40 Unit A A
* : The hFE1 of the 2SC442... |
Description |
NPN Triple Diffused Planar Silicon Transistor 800v/8A Switching Regulator Applications
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File Size |
105.91K /
4 Page |
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it Online |
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Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
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Part No. |
APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL03 APT10090BLLG
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OCR Text |
...te Voltage Drain Current (VDS = 800v, VGS = 0V, TC = 125C) Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage (VDS = V...6a
D
25
1.30 1.20
20 15
TJ = +125C TJ = +25C
1.10
VGS=10V VGS=20V
10
VDS> ID ... |
Description |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN 12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
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File Size |
93.49K /
5 Page |
View
it Online |
Download Datasheet
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Price and Availability
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