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VISAY[Vishay Siliconix]
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| Part No. |
BFP81
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| OCR Text |
... 53.3 51.8 49.7 LIN MAG 0.967 0.865 0.768 0.691 0.666 0.649 0.630 0.613 0.608 0.603 0.594 0.596 0.581 0.920 0.718 0.614 0.560 0.547 0.538 0.524 0.511 0.505 0.500 0.486 0.480 0.464 0.851 0.599 0.522 0.494 0.490 0.486 0.474 0.461 0.455 0.449 ... |
| Description |
From old datasheet system
Silicon NPN Planar RF Transistor
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| File Size |
151.91K /
10 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H
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| OCR Text |
...0,914 0,898 0,887 0,879 0,872 0,865 0,859 0,854 0,849 0,844 0,839 0,835 0,831 0,826 0,823 0,820 0,817 0,814 0,812 0,811 0,809 0,808 0,807 0,805 0,804 0,804 0,803 0,803 0,802 0,801 0,800 0,799 0,798 0,798 0,797 0,796 0,796 0,795 0,794 0,793 ... |
| Description |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
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| File Size |
610.03K /
9 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
CLY38-10 CLY38 CLY38-00 CLY38-05
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| OCR Text |
...13,2 0,863 152 1,56 17,0 12,6 0,865 151 1,61 16,7 12,1 0,867 150 1,61 16,3 11,7 0,869 149 1,66 16,0 11,2 0,870 147 1,72 15,7 10,8 0,871 146 1,75 15,4 10,4 0,872 145 1,77 15,0 10,0 0,873 144 1,81 14,8 9,6 0,875 143 1,84 14,5 9,2 0,876 141 1,... |
| Description |
CUTTERS, ANGLED FULL FLUSH 120MMCUTTERS, ANGLED FULL FLUSH 120MM; Capacity, cutting copper wire:1.2mm; Length:120mm; Capacity, cutting soft iron:1.0mm; Edge Finish/Profile:Full Flush; Head type:Oblique; Length, blade:10mm 伊雷尔C波段砷化镓功率场效应
CUTTERS, OBLIQUE FULL FLUSH 125MMCUTTERS, OBLIQUE FULL FLUSH 125MM; Capacity, cutting copper wire:0.8mm; Length:125mm; Capacity, cutting soft iron:0.6mm; Edge Finish/Profile:Full Flush; Length, jaw:20mm 伊雷尔C波段砷化镓功率场效应
CUTTERS, OBLIQUE FULL FLUSH 135MMCUTTERS, OBLIQUE FULL FLUSH 135MM; Capacity, cutting copper wire:0.8mm; Length:135mm; Capacity, cutting soft iron:0.6mm; Edge Finish/Profile:Full Flush; Head type:Slim; Length, jaw:20mm
HiRel C-Band GaAs Power-MESFET
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| File Size |
560.56K /
9 Page |
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it Online |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
LET9085
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| OCR Text |
...l Input Moscap.
DYNAMIC (f = 865 - 895 MHz)
Symbol P1dB D GP IMD3 Load mismatch POUT (CDMA)(1) D (CDMA)(1)
(1) IS-95 CDMA
Test Condi...960 MHz)
P1dB GP D Load mismatch POUT(EDGE) D(EDGE) VDD = 26 V VDD = 26 V VDD = 26 V IDQ = TBD IDQ ... |
| Description |
RF POWER TRANSISTORS LDMOS ENHANCED TECHNOLOGY
RF POWER TRANSISTORS Ldmos Enhanced Technology
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| File Size |
34.21K /
4 Page |
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it Online |
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SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
LET9130
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| OCR Text |
...E LATERAL MOSFETs * IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 % * EDGE: 920-960 MHz / 28 V POUT = 45 W EFF. = 38 % * GSM: 920-960 MHz / 28 V POUT = 135 W EFF. = 51 % * EXCELLENT THERMAL STABILITY * BeO FREE PACKAGE * INTERNAL INP... |
| Description |
RF POWER TRANSISTORS Ldmos Enhanced Technology
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| File Size |
56.64K /
6 Page |
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MACOM[Tyco Electronics]
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| Part No. |
MADCSM0001TR MADCSM0001 MADCSM0001SMB
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| OCR Text |
...
11
10
10
9
9
8 865
870
875
880
885
890
895
900
8 865
870
875
880
885
890
895
9...960
965
970
975
980
985
11 950
955
960
965
970
975
980
985
... |
| Description |
Dual-Band/Triple-Mode Downconverter 869 - 893 MHz and 1930 - 1990 MHz
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| File Size |
264.46K /
8 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0910A_1 MGF0910A MGF0910A1
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| OCR Text |
... 29.1 Magn. 0.869 0.869 0.867 0.865 0.860 0.854 0.845 0.840 0.832 0.825 0.818 0.805 0.795 0.782 0.773 0.757 0.750 0.740 0.725 0.708 0.687 0.672 0.662 0.642 0.629 0.610 S22 Angle(deg.) -177.6 -179.6 178.5 178.2 177.6 176.8 175.6 176.6 176.1 ... |
| Description |
L, S BAND POWER GaAs FET
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| File Size |
176.99K /
4 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MHVIC915NR2
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| OCR Text |
... Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) Bias Sense FET Drain Current VBSD = 27 V VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA Gps PAE I...960 MHz) Deviation from Linear Phase in 30 MHz Bandwidth @ Pout = 23 dBm Group Delay @ Pout = 23 dBm... |
| Description |
RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
489.75K /
16 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
Motorola, Inc.
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| Part No. |
MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D
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| OCR Text |
... Gain Flatness @ Pout = 23 dBm (865 MHz to 895 MHz) Bias Sense FET Drain Current VBSD = 27 V VBIAS BSG = VBIAS2 Q2 @ IDQ2 = 120 mA Gps IRL ...960 MHz) Deviation from Linear Phase @ Pout = 23 dBm Group Delay @ Pout = 23 dBm Insertion Phase Win... |
| Description |
MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V RF LDMOS Wideband Integrated Amplifier
746-960 MHz RF LDMOS Wideband Integrated Power Amplifier
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| File Size |
648.85K /
12 Page |
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it Online |
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MACOM[Tyco Electronics]
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| Part No. |
MRF151A
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| OCR Text |
...0.904 0.909 0.884 0.874 0.875 0.865 0.850 0.808 0.802 0.784 0.764 0.756 0.715 0.707 0.911 |S22|
S22
-180
-179
-178
-176
-1...960 0.944 0.981 0.978 0.950 0.948 0.935 0.954 0.943 0.929 0.944 0.965 0.953 0.954 0.935 |S22|
S22... |
| Description |
The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET
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| File Size |
278.41K /
8 Page |
View
it Online |
Download Datasheet |
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