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D1246 IRFAE40 555C1H1 0ZA1T 2200GC 21008 100MH MM1567
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    IRF634N IRF634NL IRF634NS

IRF[International Rectifier]
Part No. IRF634N IRF634NL IRF634NS
OCR Text ... mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications b...
Description Power MOSFET(Vdss=250V, Rds(on)=0.435ohm, Id=8.0A)

File Size 240.26K  /  11 Page

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    IRFZ24L IRFZ24NS IRFZ24NSTRR IRFZ24NSTRL IRFZ24NL IRZ24NS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ24L IRFZ24NS IRFZ24NSTRR IRFZ24NSTRL IRFZ24NL IRZ24NS
OCR Text ... mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2 Pak is suitable for high current applications b...
Description (159.21 k) 59.21十一
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) 功率MOSFET(减振钢板基本\u003d 55V的,的Rds(on)\u003d 0.07ohm,身份证\u003d 17A条)
55V,17A,N-Channel HEXFET Power MOSFET(55V,17A,N沟道 HEXFET功率MOS场效应管) 55V的,17A条,N沟道HEXFET功率MOSFET5V的,17A条,沟道的HEXFET功率马鞍山场效应管)
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package

File Size 155.28K  /  10 Page

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    IRFZ24S IRFZ24L

IRF[International Rectifier]
Part No. IRFZ24S IRFZ24L
OCR Text ... mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications be...
Description HEXFET Power MOSFET

File Size 354.95K  /  10 Page

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    IRFZ48VS

IRF[International Rectifier]
Part No. IRFZ48VS
OCR Text ... mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications b...
Description Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)

File Size 216.04K  /  8 Page

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    K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208Q0B-F K9F1208Q0B-H K9F1208Q0B-P K9F1208U0B K9F1208U0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208Q0B-F K9F1208Q0B-H K9F1208Q0B-P K9F1208U0B K9F1208U0B-D K9F1208U0B-V K9F1208U0B-Y K9F1208R0B
OCR Text ...connected to memory cell arrays accommodating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16 cells that are serially connected to form a NAND structure. Each ...
Description 64M x 8 Bit NAND Flash Memory

File Size 762.36K  /  45 Page

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    K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F4008W0A-TCB0 K9F4008W0A-TIB0

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F3208W0A- K9F3208W0A-TCB0 K9F3208W0A-TIB0 K9F4008W0A-TCB0 K9F4008W0A-TIB0
OCR Text ...connected to memory cell arrays accommodating data transfer between the I/O buffers and memory during page read and page program operations. The memory array is made up of 16 cells that are serially connected to form a NAND structure. Each ...
Description 512K x 8 bit NAND Flash Memory
4M x 8 Bit NAND Flash Memory

File Size 555.63K  /  27 Page

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    ML6518 ML6518CH ML6518CS

MICRO-LINEAR[Micro Linear Corporation]
Part No. ML6518 ML6518CH ML6518CS
OCR Text ...ation for 18 signal lines, thus accommodating basic SCSI which requires 18 lines to be terminated. When used with the ML6599, wide SCSI, which requires 27, 36 or 45 lines to be terminated, can also be accommodated. The ML6518 integrates an ...
Description 18 Line Hot-Insertable Active SCSI Terminator

File Size 202.63K  /  8 Page

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    KM29W040AT KM29W040AIT

Samsung semiconductor
Samsung Electronic
Part No. KM29W040AT KM29W040AIT
OCR Text ...connected to memory cell arrays accommodating data transfer between the registers and the cell array during frame read and frame program operations. The memory array is composed of unit NAND structures in which 8 cells are connected seriall...
Description V(cc): 2.7 -3.6V; 512M x 8 bits NAND flash memory
512K x 8 bit NAND Flash Memory

File Size 357.22K  /  22 Page

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    IRL620S

IRF[International Rectifier]
Part No. IRL620S
OCR Text ...-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface-mount package. The SMD-220 is suitable for high current applications...
Description Power MOSFET(Vdss=200V Rds(on)=0.80ohm Id=5.2A)
Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)

File Size 453.97K  /  9 Page

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