...rain [1] 3ssource mb d mounting base; connected to drain mb 13 2 s d g mbb076 table 3. ordering information type number package name descrip...gate voltage t j 175 c; t j 25 c; r gs =20k ? - 100 v v gs gate-source voltage -20 20 v i d drain ...
Description
N-channel 100V 6.8 m? standard level MOSFET in D2PAK.
... - 1.5 k/w junction to mounting base half cycle - - 2.0 k/w r th j-a thermal resistance in free air - 60 - k/w junction to ambient static ch...gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ - 5 35 25 50 ma t2+ g- - 8 35 25 50 ma t2- g- ...
...power on to the IC. wn The Lamp base pin provides base current to the fault lamp drive transistor 4 Lamp base (Q2). 5 Ground Grounded to pro...gate Controls the gate of the MOSFET used to energize the field winding. 22 Source Field winding con...
...ert bercksichtigen) calculation base p tav (switching losses should be considered separately) parameter: stromflu?winkel / current conducti...gate characteristic v g = f (i g ) with triggering area for v d = 6 v h?chstzul?ssige spitzensteue...
...rminal 2 (T2) gate (G) mounting base; main terminal 2 (T2) Simplified outline
mb
Symbol
T2
sym051
T1 G
1
2
3
SOT78 (TO-220AB)
NXP Semiconductors
BTA312 series CT and ET
12 A Three-quadrant triacs high commutation...
Description
12 A Three-quadrant triacs high commutation high temperature
...temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Unit V V V mA A mW C C
1 2
1 Single pulse ...gate-source voltage ID 100 Continuous Drain current 200 IDP Pulsed IDR 100 Continuous Reverse drain ...