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78L05A 2SC2073 7MCMXXXF 170B50 00907 A102A K2312 SC4502H
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  cell-b Datasheet PDF File

For cell-b Found Datasheets File :: 12137    Search Time::1.297ms    
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    AM28F010 AM28F010-200JEB AM28F010-150FIB AM28F010-120PIB AM28F010-150EE AM28F010-200EC AM28F010-90EC AM28F010-90ECB AM28

ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
Part No. AM28F010 AM28F010-200JEB AM28F010-150FIB AM28F010-120PIB AM28F010-150EE AM28F010-200EC AM28F010-90EC AM28F010-90ECB AM28F010-200FEB AM28F010-70EC AM28F010-70FEB AM28F010-90FEB AM28F010-70ECB AM28F010-120FE AM28F010-200FC AM28F010-150FE AM28F010-150FCB AM28F010-120FCB AM28F010-150FEB AM28F010-70EI AM28F010-70EIB AM28F010-70FC AM28F010-70FCB AM28F010-70EE AM28F010-70EEB AM28F010-90FI AM28F010-90FCB AM28F010-90EI AM28F010-200FCB AM28F010-150PC 10-200JCB 10-200JIB AM28F010-200EEB AM28F010-200FIB AM28F010-90FIB AM28F010-70JCB AM28F010-70FIB AM28F010-70JEB AM28F010-70PEB
OCR Text ...w cost single transistor memory cell s Automatic write/erase pulse stop timer GENERAL DESCRIPTION The Am28F010 is a 1 Megabit Flash memo...B OPTIONAL PROCESSING Blank = Standard Processing B = Burn-In Contact an AMD representative for more...
Description 1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 150 ns, PDIP32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 200 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 128K X 8 FLASH 12V PROM, 90 ns, PDSO32
CMOS Dual Binary Up-Counter 16-TSSOP -55 to 125
CMOS Dual Binary Up-Counter 16-SO -55 to 125
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory

File Size 265.39K  /  35 Page

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    IDT77V012L155DA IDT77V012

Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
Part No. IDT77V012L155DA IDT77V012
OCR Text ...erfaces Supports UTOPIA Level 1 cell mode operation 4-bit DPI Tx and Rx interfaces DPI interface supports cell sizes from 52 to 56 bytes for...B ALE AD[7] AD[6] AD[5] AD[4] AD[3] VCC GND AD[2] AD[1] AD[0] PHYIN T RD WR PH YR ST PH Y C S DATA[3...
Description Data Path Interface to UTOPIA Level 1 Header Translation Device

File Size 406.58K  /  46 Page

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    Samsung
Part No. K9HAG08U1M
OCR Text ...~ 3.6 V * Organization - Memory Cell Array : (1G+ 32M)bit x 8bit - Data Register : (2K + 64)bit x8bit * Automatic Program and Erase - Page P...B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 1...
Description Flash Memory

File Size 836.10K  /  44 Page

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    Samsung Electronics
Part No. K9HBG08U1M K9MCG08U5M K9LAG08U0M
OCR Text ...~ 3.6 V * Organization - Memory Cell Array : (2G + 64M)bit x 8bit - Data Register : (2K + 64)bit x8bit * Automatic Program and Erase - Page ...B RE CE N.C N.C Vcc Vss N.C N.C CLE ALE WE WP N.C N.C N.C N.C N.C 1 2 3 4 5 6 7 8 9 10 11 12 13 14 1...
Description Flash Memory

File Size 995.63K  /  45 Page

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    SCFR3518-C3530 SCFR3520

FCI connector
First Components International
Part No. SCFR3518-C3530 SCFR3520
OCR Text ...m a x . 3 soza cell scfr3518~3530 35 amps soza cell mechanical dimension descriptions auto avalanche diodes ratings and characteristic curves scfr3518 ~scfr3530 fig.1 - forward current derating curve fig.3 - typical ...
Description 35 Amps SOZA CELL AUTO AVALANCHE DIODES High surge current capability

File Size 440.15K  /  2 Page

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    1308A LT1308A1 LT1308BIS8-PBF LT1308BCF-PBF LT1308BCF-TR LT1308BCF-TRPBF LT1308BIS8-TRPBF

Linear Technology
http://
Part No. 1308A LT1308A1 LT1308BIS8-PBF LT1308BCF-PBF LT1308BCF-TR LT1308BCF-TRPBF LT1308BIS8-TRPBF
OCR Text Cell, 600kHz DC/DC Converters FEATURES DESCRIPTIO 5V at 1A from a Single Li-Ion Cell 5V at 800mA in SEPIC Mode from Four...B F01a 50 1 10 100 LOAD CURRENT (mA) 1000 1308A/B F01b Figure 1. LT1308B Single Li-Ion Cell t...
Description High Current, Micropower Single Cell, 600kHz DC/DC Converters

File Size 764.01K  /  20 Page

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    TH58NVG5S0FTA20

Toshiba Semiconductor
Part No. TH58NVG5S0FTA20
OCR Text ...en the register and the memory cell array in 4328-byte increments. the erase operation is implemented in a single block unit (256 kbytes ...b) ce 2 chip enable (chip c,d) we write enable re read enable cle command latch enable ale ...
Description 32 GBIT (4G × 8 BIT) CMOS NAND E2PROM

File Size 706.20K  /  73 Page

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    Fujitsu
Part No. MBM29BS12DH-12 E520910
OCR Text ...ulse widths and verifies proper cell margins. Typically, each 32K words sector can be programmed and verified in about 0.3 second. Erase is ...B: 48 Mbit (32 Kwords x 96) Bank C: 48 Mbit (32 Kwords x 96) Bank D: 16 Mbit (4 Kwords x 8 and 32 Kw...
Description Flash Memory - Super Low Voltage Single 1.8V
From old datasheet system

File Size 368.71K  /  85 Page

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    ECLAMP2396P.TCT ECLAMP2396P

Semtech Corporation
Part No. ECLAMP2396P.TCT ECLAMP2396P
OCR Text ...in portable electronics such as cell phones, digital still cameras, and PDAs. EClamp2396P PRELIMINARY Features Bidirectional EMI/RFI...B DIM PIN 1 INDICATOR (LASER MARK) E A aaa C A2 D1 1 E1 N e D/2 2 LxN E/2 A1 C SEATING PLA...
Description ESD/EMI Protection for Color LCD Interfaces

File Size 210.94K  /  8 Page

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    NE57605 NE57605_1 NE57605CD

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. NE57605 NE57605_1 NE57605CD
OCR Text cell battery packs Product data 2001 Oct 03 Philips Semiconductors Philips Semiconductors Product data Lithium-ion battery prot...B VDF-GND; ISI = -20 A; SW1: B VOV = 0.4 V; Tamb = -20 C to +70 C VOV = 24 V DF = HIGH DF = LOW VCEL...
Description From old datasheet system
Lithium-ion Battery Protector for 3 or 4 cell battery packs

File Size 152.87K  /  10 Page

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