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  cesat Datasheet PDF File

For cesat Found Datasheets File :: 5187    Search Time::3.891ms    
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    PBLS6005D

NXP Semiconductors
Part No. PBLS6005D
OCR Text cesat breakthrough in small signal (biss) transistor and npn resistor-equipped transistor (ret) in a sot457 (sc-74) small surface mounted device (smd) plastic package. 1.2 features n low v cesat (biss) transistor and resistor-equipped tran...
Description 60 V PNP BISS loadswitch

File Size 130.56K  /  16 Page

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    LT3497EDDBPBF

Linear Technology
Part No. LT3497EDDBPBF
OCR Text ...t sw2 300 400 ma converter 1 v cesat i sw1 = 200ma 200 mv converter 2 v cesat i sw2 = 200ma 200 mv switch 1 leakage current v sw1 = 16v 0.1 5 a switch 2 leakage current v sw2 = 16v 0.1 5 a top view 11 ddb package 10-lead (3mm 2mm) ...
Description Dual Full Function White LED Driver with Integrated Schottky Diodes

File Size 300.37K  /  20 Page

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    BCM846S07

Infineon Technologies AG
Part No. BCM846S07
OCR Text ... i c = 100 ma, i b = 5 ma v cesat - - 90 200 300 650 mv base emitter saturation voltage 2) i c = 10 ma, i b = 0.5 ma i c = 100 ma, i b = 5 ma v besat - - 700 900 - - base-emitter voltage- 2) i c = 2 ma, v ce = ...
Description NPN Silicon AF Transistor Array

File Size 87.24K  /  9 Page

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    BUL56B

Inchange Semiconductor Company Limited
Part No. BUL56B
OCR Text ...e i e =1ma ;i c =0 10 v v cesat-1 collector-emitter saturation voltage i c =1a ;i b =0.1a 0.2 v v cesat-2 collector-emitter saturation voltage i c =7a ;i b =0.7a 0.6 v v cesat-3 collector-emitter saturation voltage i c =12...
Description Silicon NPN Power Transistors

File Size 37.47K  /  3 Page

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    SavantIC
Part No. BUL56B
OCR Text ...e i e =1ma ;i c =0 10 v v cesat-1 collector-emitter saturation voltage i c =1a ;i b =0.1a 0.2 v v cesat-2 collector-emitter saturation voltage i c =7a ;i b =0.7a 0.6 v v cesat-3 collector-emitter saturation voltage i c =12a; ...
Description SILICON POWER TRANSISTOR

File Size 119.02K  /  3 Page

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    CM150DX-24S

Mitsubishi Electric Semiconductor
Part No. CM150DX-24S
OCR Text ...5 t j =125 c - 2.00 - v cesat (terminal) collector-emitter saturation voltage i c =150 a (note.5) , v ge =15 v t j =150 c - 2.05 - v t j =25 c - 1.70 2.15 t j =125 c - 1.90 - v cesat (chip) collector-emitt...
Description HIGH POWER SWITCHING USE INSULATED TYPE

File Size 367.74K  /  9 Page

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    Infineon Technologies A...
Part No. BCV29
OCR Text ...i c = 100 ma, i b = 0.1 ma v cesat - - 1 v base emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 1.5 2011-10-05 3 bcv29, bcv49 1 pulse test: t < 300s; d < 2% electrical characteristics at t a = 25c, unless o...
Description For general AF applications

File Size 514.56K  /  7 Page

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    Infineon Technologies A...
Part No. BCV29
OCR Text ...i c = 100 ma, i b = 0.1 ma v cesat - - 1 v base emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 1.5 1 pulse test: t < 300s; d < 2% 2007-03-29 4 bcv29, bcv49 electrical characteristics at t a = 25c, unless o...
Description NPN Silicon Darlington Transistors

File Size 67.89K  /  8 Page

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    Infineon
Part No. BCV49
OCR Text ...i c = 100 ma, i b = 0.1 ma v cesat - - 1 v base-emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 1.5 ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 150 - mhz collector-...
Description NPN Silicon Darlington Transistor for...

File Size 98.83K  /  5 Page

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    Infineon
Part No. BCV27 BCV47
OCR Text ...i c = 100 ma, i b = 0.1 ma v cesat - - 1 v base-emitter saturation voltage 1) i c = 100 ma, i b = 0.1 ma v besat - - 1.5 ac characteristics transition frequency i c = 50 ma, v ce = 5 v, f = 100 mhz f t - 170 - mhz collector-...
Description NPN Silicon Darlington Transistor for...

File Size 99.97K  /  5 Page

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For cesat Found Datasheets File :: 5187    Search Time::3.891ms    
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