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  commutating Datasheet PDF File

For commutating Found Datasheets File :: 2408    Search Time::1.203ms    
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    MTP2P50 MTP2P50E ON2583

MOTOROLA[Motorola, Inc]
Part No. MTP2P50 MTP2P50E ON2583
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. * Robust High Voltage Termination * Avalanche Energy Specified * Source-to-Drain Diode R...
Description From old datasheet system
TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 6.0 OHM

File Size 230.76K  /  8 Page

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    MTP3055VL MTP3055VL_D ON2587

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055VL MTP3055VL_D ON2587
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. New Features of TMOS V * On-resistance Area Product about One-half that of Standard MOSF...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18 OHM
From old datasheet system

File Size 161.53K  /  8 Page

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    MTP3055 MTP3055V MTP3055V_D ON2588

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP3055 MTP3055V MTP3055V_D ON2588
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. New Features of TMOS V * On-resistance Area Product about One-half that of Standard MOSF...
Description TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.15 OHM TMOS是功率场效应晶体02安培的RDSon)\u003d 0.15欧姆
From old datasheet system

File Size 160.18K  /  8 Page

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    MTP30N06VL MTP30N06VL_D ON2590

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTP30N06VL MTP30N06VL_D ON2590
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. MTP30N06VL Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T...
Description From old datasheet system
TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.050 OHM

File Size 207.41K  /  8 Page

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    MTP30P06 MTP30P06V MTP30P06V_D ON2592

Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTP30P06 MTP30P06V MTP30P06V_D ON2592
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. MTP30P06V Motorola Preferred Device P-Channel Enhancement-Mode Silicon Gate TM...
Description TMOS POWER FET 30 AMPERES 60 VOLTS RDS(on) = 0.080 OHM TMOS是功率场效应晶体00安培的RDSon)\u003d 0.080欧姆
From old datasheet system

File Size 190.77K  /  8 Page

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    MTP40N10E ON2608 ON2607

Motorola, Inc
Part No. MTP40N10E ON2608 ON2607
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Specified * Source-to-Drain Diode Recovery Time Comparable to a Discr...
Description TMOS POWER FET 40 AMPERES 100 VOLTS RDS(on) = 0.04 OHM
From old datasheet system

File Size 157.60K  /  8 Page

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    MTP50N06EL MTP50N06

Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50N06EL MTP50N06
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Specified * Source-to-Drain Diode Recovery Time Comparable to a Discr...
Description TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 232.16K  /  8 Page

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    MTP50N06VL MTP50N06VL_D ON2618 MTP50N06

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06VL MTP50N06VL_D ON2618 MTP50N06
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. MTP50N06VL Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T...
Description From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

File Size 195.44K  /  8 Page

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    MTP50N06 MTP50N06V MTP50N06V_D ON2619

MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MTP50N06 MTP50N06V MTP50N06V_D ON2619
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. MTP50N06V Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TM...
Description From old datasheet system
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

File Size 179.25K  /  8 Page

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    MTP50P03HDL ON2621 ON2620

MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
Part No. MTP50P03HDL ON2621 ON2620
OCR Text ... circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Specified * Source-to-Drain Diode Recovery Time Comparable to a Discr...
Description TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025 OHM
From old datasheet system

File Size 128.25K  /  8 Page

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For commutating Found Datasheets File :: 2408    Search Time::1.203ms    
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