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  dt dt Datasheet PDF File

For dt dt Found Datasheets File :: 69184    Search Time::2.328ms    
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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ...tated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RqJC RqJ-PCB Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy...
Description N-CHANNEL POWER MOSFET

File Size 22.30K  /  2 Page

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...tated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RqJC RqJ-PCB Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy...
Description N-CHANNEL POWER MOSFET

File Size 22.29K  /  2 Page

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...ra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified VDSS = 75V G S Benefits q q q q q q RDS(on) = 0.0075 ID = 142A Descriptio...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

File Size 179.50K  /  9 Page

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...ra Low On-Resistance Dynamic dv/dt Rating Fast Switching Repetitive Avalanche Allowed up to Tj Max Automotive Qualified (Q101) HEXFET(R) Power MOSFET VDSS = 40V RDS(on) = 0.004 G ID = 170A S Description Specifically designed for...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

File Size 100.05K  /  8 Page

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...GS = 0V TJ = 25C, I F = 2.5A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board Pulse width 400s; duty cycle 2%. 2 www.ir...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

File Size 105.83K  /  9 Page

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ...ra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 40V G S Features RDS(on) = 3.6m ID = 210A Description Specifically designed for Automot...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...13) TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/s TJ = 25oC, ISD = 8.1A, dISD/dt = 100A/s 92 0.63 180 1.3 2.0 390 2.7 V ns C 2. Pulse test: pulse width 300s, duty cycle 2%. 3. Repetitive rating: pulse width limited by Max junctio...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF240SMD

SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
Part No. IRF240SMD
OCR Text ...tated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RqJC RqJ-PCB Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy...
Description    N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET(减振钢板基本:200伏,身份证(续)3.9A,的Rds(on):0.18Ω)(不适用马鞍山沟道功率场效应管(减振钢板基本00伏,身份证(续)3.9A时,RDS(对):0.18Ω))

File Size 22.29K  /  2 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ... 13) TJ = 25oC, ISD = 14A, dISD/dt = 100A/s TJ = 25oC, ISD = 14A, dISD/dt = 100A/s Intrinsic Turn-On Time is Negligible, Turn-On Speed is Substantially Controlled by LS + LD 150 1.6 - 300 3.4 - 1.8 640 7.2 - V ns C - 2. Pulse...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF250SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF250SMD
OCR Text ...tated) VGS ID ID IDM PD EAS dv/dt TJ , Tstg TL RqJC RqJ-PCB Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Single Pulse Avalanche Energy...
Description N.CHANNEL POWER MOSFET

File Size 23.37K  /  2 Page

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For dt dt Found Datasheets File :: 69184    Search Time::2.328ms    
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