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				Renesas Electronics Corporation
Part No.	CT30VM-8
OCR Text	...3. The operation life should be endured 5,000 shots under the charge current (Ixe 180A : full luminescence condition) of main condenser (CM=1000F). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total oper...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size	46.66K / 3 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP4006AGE
OCR Text	...3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe 120 A : full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3 seconds. ...
Description	Nch IGBT for Strobe Flash
File Size	88.56K / 5 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP4007ANS
OCR Text	...3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe 150 A : full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3 seconds. ...
Description	Nch IGBT for Strobe Flash
File Size	85.35K / 5 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP4301APP09
OCR Text	...3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe 200 A : full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3 seconds. 4....
Description	Nch IGBT for Strobe Flash
File Size	178.21K / 5 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP4301APP RJP4301APP-00-T2
OCR Text	...3. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe 200 A : full luminescence condition) of main capacitor. Repetition period under full luminescence condition is over 3 seconds. 4....
Description	Nch IGBT for Strobe Flash
File Size	80.36K / 5 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	CT20ASL-8
OCR Text	...3. The operation life should be endured 5,000 shots under the charge current (Ixe 130A : full luminescence condition) of main condenser (CM=400F). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total opera...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size	45.75K / 3 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	CY25CAJ-8F CY25CAJ-8F-T13
OCR Text	...4. The operation life should be endured until repeated discharge of 5,000 times under the charge current (IXe 150 A : full luminescence condition) of main capacitor. (CM = 400 F) Repetition period under full luminescence condition is over ...
Description	Nch IGBT for Strobe Flash
File Size	53.54K / 5 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	CT20TM-8
OCR Text	...3. The operation life should be endured 5,000 shots under the charge current (Ixe 130A : full luminescence condition) of main condenser (CM=800F). Repetition period under full luminescence condition is over 3 seconds. Notice 4. Total opera...
Description	MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
File Size	47.81K / 3 Page	View it Online	Download Datasheet

				Renesas
Part No.	CY20AAJ-8H
OCR Text	...3. The operation life should be endured 5,000 shots under the charge current (IXe 130 A : full luminescence condition) of main capacitor (CM = 400 F) which can endure repeated discharge of 5,000 times. Repetition period under full luminesc...
Description	Transistors>IGBT>for Stlobe use
File Size	103.71K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	CY20AAJ-8
OCR Text	...3. The operation life should be endured 5,000 shots under the charge current (Ixe 130A : full luminescence condition) of main condenser (CM = 400F). Repetitive period under the full luminescence conditions is over 3 seconds. Notice 4. Tota...
Description	Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
File Size	37.80K / 2 Page	View it Online	Download Datasheet

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