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id-14a Datasheet PDF File

For id-14a Found Datasheets File :: 1383 Search Time::3.406ms
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				NTE[NTE Electronics]
Part No.	NTE2956
OCR Text	... . . . . . . 30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description	MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	21.25K / 2 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2973 NTE2971
OCR Text	... . . . . . . 30V Drain Current, ID Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description	MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	20.36K / 2 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE2987
OCR Text	...Maximum Ratings: Drain Current, ID Continuous TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...14A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description	Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch
File Size	26.19K / 3 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFS530 IRFS530A IRFS530ANL
OCR Text	... BVDSS = 100 V RDS(on) = 0.11 ID = 10.7 A TO-220F 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM ...14A, RG=12 See Fig 13 VDS=80V,VGS=10V, ID=14A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode ...
Description	N-CHANNEL POWER MOSFET Advanced Power MOSFET 100V N-Channel A-FET / Substitute of IRFS530
File Size	259.63K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10078BFLL APT10078SFLL
OCR Text	...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage SFLL * Increased Power Dissip...14A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10078BLL APT10078SLL
OCR Text	...g MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25C...14A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device itself...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.53K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF5803D2 IRF5803D2TR
OCR Text	...ss Otherwise Noted) Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Continuous Drain Current, VGS @ -10V ...14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U...
Description	FETKY MOSFET & Schottky Diode(Vdss=-40V/ Rds(on)=112ohm) -40V FETKY - MOSFET and Schottky Diode in a SO-8 package FETKY MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm) FETKY⑩ MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm) FETKY?/a> MOSFET & Schottky Diode(Vdss=-40V, Rds(on)=112ohm)
File Size	125.10K / 11 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF5803 IRF5803TR
OCR Text	...2@VGS = -10V 190@VGS = -4.5V ID -3.4A -2.7A Description These P-channel HEXFET(R) Power MOSFETs from International Rectifier utilize...14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U...
Description	Power MOSFET(Vdss=-40V) 功率MOSFET0V的减振钢板基本\u003d- -40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
File Size	107.70K / 9 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF5804
OCR Text	...8@VGS = -10V 334@VGS = -4.5V ID -2.5A -2.0A Description These P-channel HEXFET(R) Power MOSFETs from International Rectifier utilize...14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U...
Description	Power MOSFET(Vdss=-40V) 功率MOSFET0V的减振钢板基本\u003d-
File Size	98.08K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5805
OCR Text	...VGS = -10V 0.165@VGS = -4.5V ID -3.8A -3.0A Description These P-channel MOSFETs from International Rectifier utilize advanced proces...14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U...
Description	Power MOSFET(Vdss=-30V)
File Size	125.03K / 9 Page	View it Online	Download Datasheet

For id-14a Found Datasheets File :: 1383 Search Time::3.406ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |