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Shenzhen Winsemi Microelectronics Co., Ltd
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Part No. |
sBP13007-s
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OCR Text |
...ssipat i on at t a = 2 5 2.1 t j operati o n jun c tion t e mperat u re - 40 ~ 150 t s t g storage t e mperature - 40 ~ 150 t c : case tem p e r ature ( g ood cooling) t a: ambient t e m peratu r e ( w ithout heat sink) thermal thermal t... |
Description |
High Voltage Fast-switchingNPN Power Transistor
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File Size |
383.79K /
5 Page |
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Shenzhen Winsemi Microelectronics Co., Ltd
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Part No. |
WTF16A60-s
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OCR Text |
...23) absolute maximum ratings (t j =25 unless otherwise specified) symbol param eter ratings units v drm peak repetitive forward blocking vo...s p gm peak gate power forward,(t c = 6 8 ,pulse with 1.0us) 5.0 w p g(av) average gate power fo... |
Description |
Bi-Directional Triode Thyristor
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File Size |
334.91K /
5 Page |
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Nell Semiconductor Co., Ltd
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Part No. |
12PT06AI-s 12FT08G-s 12FT08G-T 12FT06F-s 12FT06F-T
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OCR Text |
...ull cycle t initial = 25 c) ( , j a i t 2 i t value for fusing 2 98 a s 2 di dt / critical rate of rise of on state current 50 i gm peak gate current p g av ( ) average gate power dissipation t stg storage temperature range operating junc... |
Description |
sensitive and standard sCRs, 12A
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File Size |
1,112.57K /
7 Page |
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SENSITRON SEMICONDUCTOR
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Part No. |
MUR6030sW-s
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OCR Text |
...ax. units @i f =60a, pulse, t j = 25 c 1.40 max. forward voltage drop v f @ i f =60a, pulse, t j = 125 c 1.30 v i r1 @v r ...s, duty cycle < 2% thermal-mechanical specifications: characteristics symbol condition ... |
Description |
60 A, 300 V, sILICON, RECTIFIER DIODE, TO-247AD
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File Size |
115.85K /
3 Page |
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it Online |
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Price and Availability
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