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Freescale Semiconductor...
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| Part No. |
MPXM2202DT1
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| OCR Text |
...05 0.25 j 0.009 0.011 0.23 0.28 k 0.061 0.071 1.55 1.80 m 0 7 0 7 n 0.444 0.448 11.28 11.38 s 0.709 0.725 18.01 18.41 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension a and b... |
| Description |
200 kPa On-Chip Temperature Compensated Silicon Pressure Sensors
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| File Size |
342.03K /
19 Page |
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it Online |
Download Datasheet
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MOTOROLA[Motorola, Inc]
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| Part No. |
MHPM7A5S120DC3
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| OCR Text |
... 6.73 H 46.48 47.50 J 0.41 1.22 K 16.26 17.27 L 3.71 4.72 M 5.46 6.48 N 10.92 11.94 P 37.60 38.60 Q 2.01 2.62 R 23.24 23.75 S 14.35 15.37 U 99.10 100.08 V 81.28 82.55 W 42.67 43.69 Y 5.15 5.77 X 11.30 12.07 AA 2.01 2.72 AB 16.26 17.27 INCHE... |
| Description |
Hybrid Power Module
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| File Size |
162.76K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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| Part No. |
CS1108EDFR8 CS1108 CS1108EDF8 CS1108-D
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| OCR Text |
...n.
Output 10 nF VCC Fault 20 k Control VBAT VCC
GND
CS1108
GND GND GND
microprocessor
Figure 2. Applications Diagram
http://onsemi.com
3
CS1108
PACKAGE DIMENSIONS
SO-8 DF SUFFIX CASE 751-07 ISSUE V
A
8 5
-X-
... |
| Description |
Single Lamp Driver IC
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| File Size |
41.97K /
4 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CRF24060D
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| OCR Text |
...ain, Maximum Available Gain and K Factor of the CRF24060D VDD = 48 V, IDQ = 2000 mA
30
MAG and K Factor
0.6
25
MSG, MAG (dB)
...die parameters - reference planes at centers of gate and drain bonding pads. No wire bonds assumed.
... |
| Description |
60 W SiC RF Power MESFET Die
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| File Size |
714.86K /
8 Page |
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it Online |
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CREE[Cree, Inc]
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| Part No. |
CRF24010D
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| OCR Text |
...ain, Maximum Available Gain and K Factor of the CRF2400D VDD = 48 V, IDQ = 500 mA
30
MAG and K Factor
0.6
25
MSG, MAG (dB)
0...die parameters - reference planes at centers of gate and drain bonding pads. No wire bonds assumed.
... |
| Description |
10 W SiC RF Power MESFET Die
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| File Size |
724.75K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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