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n-cdma Datasheet PDF File

For n-cdma Found Datasheets File :: 2163 Search Time::1.656ms
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				Freescale Semiconductor, Inc
Part No.	MRF8S9202N
OCR Text	n--channel enhancement--mode lateral mosfet designed for cdma base station applications with frequencies from 920 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--ca...
Description	RF Power Field Effect Transistor N-Channel Enhancement--Mode Lateral MOSFET
File Size	644.74K / 13 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF8S9202N12 MRF8S9202GNR3 MRF8S9202NR3
OCR Text	n--channel enhancement--mode lateral mosfets designed for cdma and multicarrier gsm base station applications with frequencies from 865 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats...
Description	RF Power Field Effect Transistors
File Size	391.04K / 14 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF8S9170NR310
OCR Text	n--channel enhancement--mode lateral mosfet designed for cdma base station applications with frequencies from 920 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--ca...
Description	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
File Size	455.97K / 13 Page	View it Online	Download Datasheet

				Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited. FUJITSU[Fujitsu Media Devices Limited] Fujitsu Microelectronics
Part No.	VC-2R8A80-1635L VC-3R0A80-1668N VC-2R2A80 VC-2R2A80-0717K VC-2R8A80-0739A VC-2R8A80-0967L
OCR Text	...s DESCRIPTION With excellent C/N characteristics and low current consumption, this VCO series is ideal for PDC, PHS, CDMA, PCS and GSM mobile communication equipment. The VC-80 series can be used in any frequency band in the 700MHz to 2000...
Description	M39012 MIL RF CONNECTOR VCO, 1649.7 MHz - 1686.3 MHz ASSP for Mobile Telephone ASSP的移动电 ASSP for Mobile Telephone VCO, 719.65 MHz - 758.65 MHz ASSP for Mobile Telephone VCO, 1620 MHz - 1650 MHz
File Size	60.10K / 13 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF8P18265H MRF8P18265HR6 MRF8P18265HSR6
OCR Text	n--channel enhancement--mode lateral mosfets designed for cdma and multicarrier base station applications with frequencies from 1805 to 1880 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ...
Description	RF Power Field Effect Transistors
File Size	608.72K / 14 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers
Part No.	M82710
OCR Text	n n n n e e l l c c o o m m m m u u n n i i c c a a t t i i o o n n s s c c o o n n v v e e r r g g e e n n c c e e p p r r o o ...cdma and cdma2000 based networks. its dsp cores are architected to maximize the density of smv (is-8...
Description	ComcertoTM 700 Series Carrier Convergence Processor
File Size	169.89K / 2 Page	View it Online	Download Datasheet

				EPCOS
Part No.	B39881B7654P810
OCR Text	...duplexer data sheet application n low-loss saw duplexer for mobile telephone w-cdma band 5 / cdma 800 systems n low insertion attenuation n low amplitude ripple n single-ended to balanced transformation in antenna-rx path n impedance trans...
Description	SAW Duplexer W-CDMA Band 5 / CDMA 800
File Size	249.44K / 13 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF8S9200NR310
OCR Text	n--channel enhancement--mode lateral mosfet designed for cdma base station applications with frequencies from 920 to 960 mhz. can be used in class ab and class c for all typical cellular base station modulation formats. ? typical single--ca...
Description	RF Power Field Effect Transistor N--Channel Enhancement--Mode Lateral MOSFET
File Size	484.00K / 13 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
Part No.	MRF19030 MRF19030R3 MRF19030SR3
OCR Text	...Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier application...
Description	RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	386.08K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc]
Part No.	MRF19060 MRF19060R3 MRF19060SR3
OCR Text	...Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier applications. * Typ...
Description	RF POWER FIELD EFFECT TRANSISTORS L BAND, Si, N-CHANNEL, RF POWER, MOSFET
File Size	382.95K / 8 Page	View it Online	Download Datasheet

For n-cdma Found Datasheets File :: 2163 Search Time::1.656ms
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