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  pcs cdma amp umts p-hemt trans Datasheet PDF File

For pcs cdma amp umts p-hemt trans Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    Motorola
Part No. MW4IC915
Description MW4IC915MBR1, MW4IC915GMBR1 GSM/GSM EDGE, N-cdma, W-cdma, 860-960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Power amplifiers

File Size 478.60K  /  16 Page

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    New Jersey Semiconductor
Part No. 2N334 2N335 2N334A 2N335/1299
Description trans GP BJT NPN 3-Pin TO-5
trans GP BJT PNP 45V 0.03A 6-Pin LCC-2
trans GP BJT PNP 40V 0.2A 6-Pin LCC-2

File Size 62.24K  /  1 Page

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    Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
Part No. IS63LV1024 IS63LV1024L-12T IS63LV1024L-8TI IS63LV1024L IS63LV1024L-10B IS63LV1024L-10BI IS63LV1024L-10HI IS63LV1024L-10J IS63LV1024L-10JI IS63LV1024L-10KI IS63LV1024L-10T IS63LV1024L-10TI IS63LV1024L-12B IS63LV1024L-12BI IS63LV1024L-12H IS63LV1024L-12J IS63LV1024L-12JI IS63LV1024L-12K IS63LV1024L-12KI IS63LV1024L-12TI IS63LV1024L-8B IS63LV1024L-8BI IS63LV1024L-8H IS63LV1024L-8J IS63LV1024L-8JI IS63LV1024L-8K IS63LV1024L-8KI IS63LV1024L-8T IS63LV1024L-10K
Description 128K x 8 HIGH-SPEED CMOS STATIC RAM 3.3V REVOLUTIONARY PINOUT 128K X 8 STANDARD SRAM, 8 ns, PDSO32
trans PNP W/RES 50HFE NS-B1 128K X 8 STANDARD SRAM, 12 ns, PBGA36
trans PNP W/RES 30HFE NS-B1 128K X 8 STANDARD SRAM, 10 ns, PDSO32
trans PNP W/RES 60HFE NS-B1
CAP CERAMIC 330PF 50V NP0 0805

File Size 42.57K  /  9 Page

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    Techspray
Thomas
Part No. 207 261 277 219-6 2027 2056 2120
Description W-cdma/N-cdma Cellular Phone HBT PA Management ICs
Low-Frequency Dual EconOscillator
Interface IC 接口IC
Precision, Quad, SPST Analog Switches 接口IC

File Size 837.76K  /  9 Page

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    飞思卡尔半导体(中国)有限公司
MOTOROLA[Motorola, Inc]
Part No. MW4IC915MBR1 MW4IC915GMBR1 MW4IC915
Description MW4IC915MBR1. MW4IC915GMBR1 GSM/GSM EDGE. N-cdma. W-cdma. 860-960 MHz. 15 W. 26 V RF LDMOS Wideband Integrated Power amplifiers MW4IC915MBR1MW4IC915GMBR1的GSM / GSM的EDGE网络 - cdma技术。的W - cdma860-960兆赫15日布什26最小输LDMOS的宽带集成功率放大器

File Size 665.04K  /  16 Page

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    New Jersey Semiconductor
Part No. 2N5229 2N5230
Description trans GP BJT PNP 25V 3-Pin TO-92 Box
trans GP BJT NPN 50V 0.1A 3-Pin TO-92 T/R

File Size 71.76K  /  2 Page

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    New Jersey Semiconductors
Part No. MRF6522-60 MRF6522-70
Description trans RF MOSFET N-CH 60V 7A 3-Pin Case 360B-04
trans RF MOSFET N-CH 65V 7A 3-Pin NI-600

File Size 48.44K  /  1 Page

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    CREE POWER
Part No. CRF-22010-001 CRF-22010-101
Description 62.5mW; 120VDC; SiC RF power MESFET. For class A,AB amplifiers; TDMA, EDGE, cdma, W-cdma, broadband amplifiers, CATV amplifiers, MMDS

File Size 140.33K  /  8 Page

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    Alpha Industries Inc
Alpha Industries, Inc.
Part No. AV133-315
Description HIP3??Variable Attenuator for umts Base Stations
HIP3 Variable Attenuator for umts Base Stations
HIP3Variable Attenuator for umts Base Stations

File Size 247.31K  /  3 Page

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    Ametherm, Inc
Part No. SL1010003 SL1010003-B
Description trans,WALL,9VDC/800mA,F2 2.1mm x 5.5mm,UL/CUL
trans,WALL,REG LIN,9VDC/500mA 2.1mmX5.5mm,CTR POS,UL/CSA

File Size 29.60K  /  1 Page

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