rg-161 u pdf Datasheet P7 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : MAX6738 KSS343W 12165 M4005 CM6022 2SD2655 UPD720 STM43
	Product Description
	Full Text Search

rg-161 u Datasheet PDF File

For rg-161 u Found Datasheets File :: 752 Search Time::1.266ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				IRF[International Rectifier]
Part No.	IRLML2803 IRLML2803TR IRLML2803PBF
OCR Text	...d 9 VDD = 15V ID = 0.91A ns RG = 6.2 RD = 16, See Fig. 10 VGS = 0V pF VDS = 25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and C...161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 1.32 ( .051 ) 1.12 ( .045 )...
Description	30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package Power MOSFET(Vdss=30V, Rds(on)=0.25ohm)
File Size	188.07K / 9 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10021JFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 37 148 1.3 18 300 600 ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.46K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10021JLL
OCR Text	... = 15V 254 VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C ns MIN TYP MAX uNIT Amps Volts ns C 37 148 1.3 (Body ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.69K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10026JFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 30 120 1.3 18 310 625 ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.42K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT10026JLL
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 30 120 1.3 ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	56.68K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT10043 APT10043JVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 7500 675 310 320 38 169 14 10 51 11 9000 945 465 480 57 250 28 20 75 22 ns ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 1000V 22A 0.430 Ohm
File Size	73.54K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT10M07JVR APT10M07
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 18000 6800 2800 700 130 300 25 60 80 20 21600 9500 4200 1050 195 435 50 120 ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	POWER MOS V 100V 225A 0.007 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	72.90K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLML5103 IRLML5103PBF IRLML5103TR
OCR Text	...9 VDD = -15V ID = -0.60A ns RG = 6.2 RD = 25, See Fig. 10 VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and ...161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.32 ( .051 ) 1.12 ( .045 ) 1.85 ( .072 ) 1.65 ( .06...
Description	-30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package Power MOSFET(Vdss=-30V, Rds(on)=0.60ohm)
File Size	190.06K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STB8NC50
OCR Text	... Conditions VDD = 250V, ID = 4A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 400V, ID = 8A, VGS = 10V Min. Typ. 19 14 36 5 18.2 45 ...161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on 8/9 sales ...
Description	N-CHANNEL 500V 0.7 OHM 8A D2PAK POWERMESH II MOSFET N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh⑩II MOSFET N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMeshII MOSFET N-CHANNEL 500V - 0.7ohm - 8A D2PAK PowerMesh?II MOSFET
File Size	440.53K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STD2NB50 STD2NB50-1 STD2NB50T4
OCR Text	...onditions VDD = 200V, ID = 0.5A RG = 4.7 VGS = 10V (see test circuit, Figure 3) VDD = 4000V, ID = 1A, VGS = 10V Min. Typ. 20 24 7 2.5 3.5 10...161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 * ...
Description	N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFET N-CHANNEL 500V 5 OHM 1A DPAK/IPAK POWERMESH POWER MOSFET N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh MOSFET N-CHANNEL 500V - 5ohm - 1A DPAK / IPAK PowerMesh⑩ MOSFET
File Size	450.65K / 10 Page	View it Online	Download Datasheet

For rg-161 u Found Datasheets File :: 752 Search Time::1.266ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |