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  s-gw Datasheet PDF File

For s-gw Found Datasheets File :: 1501    Search Time::1.563ms    
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    SSDI[Solid States Devices, Inc]
Part No. SFT3906A2GW SFT3906A2
OCR Text Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * ww...GW = Gullwing Maximum Ratings Symbol Value Units Collector - Emitter Voltage Collecto...
Description Dual Microminiature Package 800 mA 75 Volts Dual PNP Transistor

File Size 30.15K  /  2 Page

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    Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
Part No. W25S243AF-12 W25S243A W25S243A-12 W25S243AD-12
OCR Text ...3 9 //// / CV V/ B BB B/ C E S D C W W W WO L 3 S DE8 7 6 5 EK // / / / AA/ V // B / BBVV B BDDAS W G WWS D W WS S D S E W4 3 S D 2 1 ...GW BWE BW1- BW8 OE ADV ADSC ADSP ZZ FT TYPE Input, Synchronous I/O, Synchronous Input, Clock Input, ...
Description DIODE SCHOTTKY QUAD SERIES (RAIL CLAMP) 25V 200mW 0.35V-vf 200mA-IFM 1mA-IF 2uA-IR SOT-363 3K/REEL 64K X 64 STANDARD SRAM, 12 ns, PQFP128
From old datasheet system
64K X 64 BURST PIPELINED HIGH-SPEED CMOS STATIC RAM

File Size 299.90K  /  17 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K7A401800B-QC K7A403600B-QC K7A403200B-QC K7A403601B-QC K7A403201B-QC K7A403209B-QC K7A401809B-QC
OCR Text ...ted inter- nally in the system s burst sequence and are controlled by the burst address advance( adv ) input. lbo pin is dc operated and ...gw bw we x oe zz dqa 0 ~ dqd7 burst control logic burst 128kx36/32 , 256kx18 address control output ...
Description 128Kx36/x32 & 256Kx18 Synchronous SRAM
128Kx36/x32 & 256Kx18 Synchronous SRAM 128Kx36/x32

File Size 472.50K  /  18 Page

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    CM10MD-12H

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CM10MD-12H
OCR Text ...NG & CIRCUIT DIAGRAM P P1 GU R S T B EU GV EV GW EW Dimensions in mm 2.54 2.54 2.54 2.54 2.54 2.54 2.54 GB GU GV GW E 7.5 8 8 12.28 7.62 7.62 7.62 GW EU EV GV EW GW GV GU GB E N 2 - 4.8 0.1 MOUNTING HOLES U ...
Description MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 154.05K  /  5 Page

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    Powerex, Inc.
Powerex Inc
POWEREX[Powerex Power Semiconductors]
Part No. CM10MD1-24H CM10MD1-24
OCR Text ...LABEL D Q U B F E R S T N U V W P S V "T" THICK W N H H P H H X 30 MAIN TERMINAL Y CONTROL TERMINAL K P1...GW EW GU GV GW A N U V W E Outline Drawing and Circuit Diagram Dimensions A B C...
Description CI Module Three Phase Converter Three Phase Inverter 10 Amperes/1200 Volts 10 A, 1200 V, N-CHANNEL IGBT
CI Module Three Phase Converter Three Phase Inverter 10 Amperes/1200 Volts
TRANSISTOR,IGBT POWER MODULE,COMPLEX BRIDGE,1.2KV V(BR)CES,10A I(C)

File Size 61.27K  /  4 Page

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    FS450R12KE4

Infineon Technologies AG
Part No. FS450R12KE4
OCR Text ...,/4/e1+/ .ori 4 s t$c$'$= +" q=4()*+,-.4/01+,/4/e1+/ .uri "4,...gw`#ygdeurjir+"gw`#y dk0f 4, #g 2 technische information / technical informatio...
Description EconoPACK B-series module with trench/fieldstop IGBT4 and optimized EmCon diode

File Size 368.02K  /  8 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KM736V890
OCR Text ...rated internally in the system s burst sequence and are controlled by the burst address advance( adv ) input. lbo pin is dc operated and ...gw bw we x oe zz dqa 0 ~ dqd 7 or dqa0 ~ dqb7 burst control logic burst 256kx36/512kx18 addres...
Description 256Kx36 Synchronous SRAM(256Kx36位同步静RAM)

File Size 365.67K  /  17 Page

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    GSI
Part No. GS88136T
OCR Text ...b o a 5 a 4 a 3 a 2 a 1 a 0 t m s t d i v s s v d d t d o t c k a 1 0 a 1 1 a 1 2 a 1 3 a 1 4 a 1 6 a 6 a 7 e 1 e 2 n c n c ...gw i global write enable?writes all bytes; active low 98 e 1 i chip enable; active low 97 e 2 i chip...
Description (GS88118 / GS88136T) Sync Burst SRAMs

File Size 349.10K  /  33 Page

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    AUSTIN[Austin Semiconductor]
Part No. AS5SS256K36DQ-8.5_XT AS5SS256K36 AS5SS256K36A AS5SS256K36ADQ-10_883C AS5SS256K36ADQ-10_IT AS5SS256K36ADQ-10_XT AS5SS256K36ADQ-8.5_883C AS5SS256K36ADQ-8.5_IT AS5SS256K36ADQ-8.5_XT AS5SS256K36DQ-10_883C AS5SS256K36DQ-10_IT AS5SS256K36DQ-10_XT AS5SS256K36DQ-8.5_883C AS5SS256K36DQ-8.5_IT
OCR Text ...e x18 device, BWa\ controls DQa's and DQPa; BWb\ controls DQb's and DQPb; BWc\ controls DQc's and DQPc; BWd\ controls DQd's and DQPd. GW\ LOW causes all bytes to be written. Parity bits are also featured on this device. This 8Mb Synchronous...
Description 256K x 36 SSRAM Flow-Through, Synchronous Burst SRAM

File Size 328.44K  /  16 Page

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    IDT
Part No. IDT71V67802
OCR Text ...71V67602/7802 SRAMs utilize IDT's latest high-performance CMOS process and are packaged in a JEDEC standard 14mm x 20mm 100-pin thin plastic...GW BWE BW1, BW2, BW3, BW4(1) CLK ADV ADSC ADSP LBO ZZ I/O0-I/O31, I/OP1-I/OP4 VDD, VDDQ VSS Address ...
Description 256K X 36, 512K X 18 3.3V Synchronous SRAMs 2.5V I/O, Burst Counter Pipelined Outputs, Single Cycle Deselect

File Size 512.42K  /  23 Page

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