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For silicon-controlled Found Datasheets File :: 17768 Search Time::2.204ms
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				IRF[International Rectifier]
Part No.	IRF3415L IRF3415S
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under ...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	152.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under ...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	90.69K / 8 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710L IRF3710S
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.025ohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A) Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)
File Size	180.61K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF3710 IRF3710PBF
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * R...
Description	Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET（减振钢板基本\u003d 100V的，的Rds（on）\u003d 23mohm，身份证\u003d 57A条） Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A) 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	92.57K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3805 IRF3805L IRF3805S
OCR Text	... extremely low onresistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching s...controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under ...
Description	AUTOMOTIVE MOSFET
File Size	358.50K / 12 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A) -55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package -55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
File Size	159.46K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF4905 IRF4B905 IRF4905PBF
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * ...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条） -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
File Size	104.67K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305L IRF5305S
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + VDD * R...
Description	Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A) Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	167.31K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF5305
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG * ISD controlled by Duty Factor "D" * D.U.T. - Device Under Test + - VDD *...
Description	Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
File Size	120.44K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF530L IRF530NS IRF530NL
OCR Text	...extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET ...controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under ...
Description	Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A) HEXFET Power MOSFET Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)
File Size	174.65K / 10 Page	View it Online	Download Datasheet

For silicon-controlled Found Datasheets File :: 17768 Search Time::2.204ms
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