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Mitsubishi Electric, Corp.
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Part No. |
CM50DY12E
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Description |
transistor | igbt power module | HALF BRiDGE | 600V V(BR)CES | 50A i(C) 晶体管| igbt功率模块|半桥| 600V的五(巴西)国际消费电子展| 50A条一(c
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File Size |
317.55K /
4 Page |
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it Online |
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iXYS, Corp.
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Part No. |
Vii125-12G4
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Description |
transistor | igbt power module | HALF BRiDGE | 1.2KV V(BR)CES | 125A i(C) 晶体管| igbt功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 125A条一(c
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File Size |
237.94K /
4 Page |
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it Online |
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Mitel Networks, Corp.
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Part No. |
GP200MHB12S
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Description |
transistor | igbt power module | HALF BRiDGE | 1.2KV V(BR)CES | 200A i(C) 晶体管| igbt功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 200安培我(丙)
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File Size |
451.00K /
10 Page |
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it Online |
Download Datasheet |
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Accutek Microcircuit, Corp.
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Part No. |
iD621K30
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Description |
transistor | igbt power module | HALF BRiDGE | 1KV V(BR)CES | 300A i(C) 晶体管| igbt功率模块|半桥| 1KV交五(巴西)国际消费电子展| 300我(丙)
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File Size |
281.65K /
3 Page |
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it Online |
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STMicroelectronics N.V. 意法半导 ST Microelectronics STMiCROELECTRONiCS[STMicroelectronics]
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Part No. |
GAL16V8 GAL16V8AS-20QC3 GAL16V8AS GAL16V8AS-10EB1 GAL16V8AS-10EB3 GAL16V8AS-10EC1 GAL16V8AS-10EC3 GAL16V8AS-10HB1 GAL16V8AS-10HB3 GAL16V8AS-10HC1 GAL16V8AS-10HC3 GAL16V8AS-10QB1 GAL16V8AS-10QB3 GAL16V8AS-10QC1 GAL16V8AS-10QC3 GAL16V8AS-12EB1 GAL16V8AS-12EB3 GAL16V8AS-12EC1 GAL16V8AS-12EC3 GAL16V8AS-12HB1 GAL16V8AS-12HB3 GAL16V8AS-12HC1 GAL16V8AS-12HC3 GAL16V8AS-12QB1 GAL16V8AS-12QB3 GAL16V8AS-12QC1 GAL16V8AS-12QC3 GAL16V8AS-15EB1 GAL16V8AS-15EB3 GAL16V8AS-15EC1 GAL16V8AS-15EC3 GAL16V8AS-15HB1 GAL16V8AS-15HB3 GAL16V8AS-15HC1 GAL16V8AS-15HC3 GAL16V8AS-15QB1 GAL16V8AS-15QB3 GAL16V8AS-15QC1 GAL16V8AS-15QC3 GAL16V8AS-20EB1 GAL16V8AS-20EB3 GAL16V8AS-20EC1 GAL16V8AS-20EC3 GAL16V8AS-20HB1 GAL16V8AS-20HB3 GAL16V8AS-20HC1 GAL16V8AS-20HC3 GAL16V8AS-20QB1 GAL16V8AS-20QB3 GAL16V8AS-20QC1 -GAL16V8AS-20HB3 -GAL16V8AS-20EC1 -GAL16V8AS-20EC3 -GAL16V8AS-10QC3
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Description |
E2PROM CMOS PROGRAMMABLE LOGiC DEViCE E2PROM的可编程逻辑器件的CMOS EMi/RFi FiLTER igbt module, TRENCH, 600V, 6 PACK; transistor type:3-Phase Bridge inverter; Voltage, Vces:600V; Current, ic continuous a max:174A; Voltage, Vce sat max:1.9V; Case style:SEMiTOP 4; Current, icm pulsed:400A; Temperature, Tj RoHS Compliant: Yes igbt module, 6 PACK 600Vigbt module, 6 PACK 600V; transistor type:igbt; Case style:SEMiTOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2.2V; Current, ic continuous a max:24A; Current, icm pulsed:22A; power, Pd:1700W; Time, rise:30ns; EPROM CMOS Programmable Logic Device
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File Size |
736.53K /
14 Page |
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it Online |
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Toshiba, Corp.
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Part No. |
MiG20J806HA
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Description |
transistor | igbt power module | COMPLEX BRiDGE | 600V V(BR)CES | 25A i(C) 晶体管| igbt功率模块|络合物桥| 600V的五(巴西)国际消费电子展|5A一(c
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File Size |
394.60K /
9 Page |
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it Online |
Download Datasheet |
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Price and Availability
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