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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
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| Part No. |
APTM120DA29TG
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| Description |
Boost chopper mosfet power module 34 A, 1200 V, 0.348 ohm, N-CHANNEL, Si, power, mosfet
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| File Size |
280.29K /
6 Page |
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it Online |
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SIEMENS[Siemens Semiconductor Group]
Infineon Technologies AG
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| Part No. |
BUZ102AL C67078-S1356-A2 BUZ102ALE3045A
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| Description |
N-Channel SIPMOS power transistor
From old datasheet system
SIPMOS ? power transistor
42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, power, mosfet, TO-220AB
SIPMOS power transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated) 42 A, 50 V, 0.028 ohm, N-CHANNEL, Si, power, mosfet, TO-220
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| File Size |
183.02K /
9 Page |
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http://
Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
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| Part No. |
BUZ100SL-4
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| Description |
Quad-Channel SIPMOS power transistor
SIPMOS ? power transistor
SIPMOS power transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, power, mosfet PLASTIC, DSO-28
20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, power, mosfet
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| File Size |
88.47K /
8 Page |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
APTM100A13SG
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| Description |
Phase leg Series & parallel diodes mosfet power module 65 A, 1000 V, 0.156 ohm, 2 CHANNEL, N-CHANNEL, Si, power, mosfet
Phase leg Series & parallel diodes mosfet power module
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| File Size |
269.72K /
6 Page |
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it Online |
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http://
INTERSIL[Intersil Corporation]
Intersil, Corp.
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| Part No. |
X9315 X9315WSZ-2.7 X9315TM X9315TM-2.7 X9315TMI X9315TMI-2.7 X9315TMIZ X9315TMIZ-2.7 X9315TMZ X9315TMZ-2.7 X9315TP X9315TP-2.7 X9315TPI X9315TPI-2.7 X9315TS X9315TS-2.7 X9315TSI X9315TSI-2.7 X9315TSIZ X9315TSIZ-2.7 X9315TSZ X9315TSZ-2.7 X9315UM X9315UM-2.7 X9315UMI X9315UMI-2.7 X9315UMIZ X9315UMIZ-2.7 X9315UMZ X9315UMZ-2.7 X9315UP X9315UP-2.7 X9315UPI X9315UPI-2.7 X9315US X9315US-2.7 X9315USI X9315USI-2.7 X9315USIZ X9315USIZ-2.7 X9315USZ X9315USZ-2.7 X9315WM X9315WM-2.7 X9315WMI X9315WMI-2.7 X9315WMIZ X9315WMZ X9315WMZ-2.7 X9315WP X9315WP-2.7 X9315WPI X9315WPI-2.7 X9315WS X9315WS-2.7 X9315WSI X9315WSI-2.7 X9315WSIZ X9315WSIZ-2.7 X9315WSZ X9315WMIZ-2.7
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| Description |
:SEMITOP 3; Centres, fixing:52.5mm; Current, Ic av:40A; Current, Ic continuous b max:32A; RoHS Compliant: Yes
max:2.1V; Case style:SEMITOP 4; Current, Icm pulsed:100A; Temperature, Tj RoHS Compliant: Yes
THYRISTOR module, 3 PHASETHYRISTOR module, 3 PHASE; Voltage, Vrrm:1600V; Case style:SEMITOP 3; Current, It rms:68A; Current, Itsm:450A; Voltage, Vgt
:SEMITOP-4; Voltage, Vceo:1200V; Voltage, Vce sat max:2.15V; Current, Ic continuous a
continuous a max:17A; Voltage, Vce sat max:2.5V; Case style:SEMITOP 3; Current, Icm RoHS Compliant: Yes
IGBT module, H BRIDGE 1200VIGBT module, H BRIDGE 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3.2V
IGBT module, DUAL 600V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:54A
IGBT module, CHOPPER 1200VIGBT module, CHOPPER 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V
IGBT module 6 PACK 114A 1200V TRENCHIGBT module 6 PACK 114A 1200V TRENCH; transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Voltage
:SEMITOP 2; Centres, fixing:38mm; Current, Ic av:23A; Current, Ic continuous b max:15A; RoHS Compliant: Yes
IGBT module, 6 PACK 1200VIGBT module, 6 PACK 1200V; transistor type:IGBT; Case style:SEMITOP 3; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V
IGBT module, DUAL 1200VIGBT module, DUAL 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:3V; Current, Ic
mosfet module, 6 PACK 75Vmosfet module, 6 PACK 75V; transistor type:mosfet; transistor polarity:N; Voltage, Vds max:100V; Case style:SEMITOP 2
RECTIFIER SCHOTTKY SINGLE 1A 70V 25A-ifsm 0.8V-vf 0.5mA-ir DO-41 5K/AMMO
DIODE SCHOTTKY SINGLE 10V 150mW 0.37V-vf 30mA-IFM 1mA-IF 1uA-IR SOT-523 3K/REEL
IGBT module, DUAL 600V; transistor type:IGBT; Case style:SEMITOP 1; Voltage, Vceo:600V; Voltage, Vce sat max:2V; Current, Ic continuous a max:30A; Current, Icm pulsed:24A; power, Pd:1400W; Time, rise:35ns; Centres, fixing:28.5mm;
Low Noise, Low power, 32 Taps 10K DIGITAL POTENTIOMETER, INCREMENT/DECREMENT CONTROL INTERFACE, 32 POSITIONS, PDIP8
IGBT module 6 PACK 96A 600V TRENCHIGBT module 6 PACK 96A 600V TRENCH; transistor type:3-phase bridge inverter; Case style:SEMITOP-4; Current, Ic continuous a max:100A
IGBT module, 6 PACK 1200VIGBT module, 6 PACK 1200V; transistor type:IGBT; Case style:SEMITOP 2; Voltage, Vceo:1200V; Voltage, Vce sat max:2.1V; Current, Ic continuous a max:22A; Current, Icm pulsed:44A; power, Pd:1600W; Time,
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| File Size |
333.42K /
14 Page |
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it Online |
Download Datasheet |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
C67076-A1004-A2 BSM151
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| Description |
SIMOPAC module (power module Single switch N channel Enhancement mode) 48 A, 500 V, 0.12 ohm, N-CHANNEL, Si, power, mosfet
From old datasheet system
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| File Size |
159.99K /
6 Page |
View
it Online |
Download Datasheet |
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Infineon Technologies AG
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| Part No. |
BUZ72L BUZ72LC67078-S1327-A2 BUZ72LSMD
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| Description |
power mosfet, 100V, D²PAK , RDSon=0.2 Ohm, 10A, LL
Low Voltage mosfets - power mosfet, 100V, TO-220, RDSon=0.2 Ohm, 10A, LL
SIPMOS power transistor
Single-coil dual-output step-down DC/DC converter for digital base band and multimedia processor supply
SIPMOS power transistor
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| File Size |
86.42K /
8 Page |
View
it Online |
Download Datasheet |
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CERAMATE TECHNOLOGY CO., Ltd.
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| Part No. |
KE524575HB KD621K20HB
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| Description |
transistor | BJT power module | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C)
transistor | BJT power module | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五（巴西）总裁| 200安培我（丙）
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| File Size |
85.83K /
2 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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