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  ultrahigh- Datasheet PDF File

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    3LP01SS

Sanyo Semicon Device
Part No. 3LP01SS
OCR Text ultrahigh-speed switching applications p-channel silicon mosfet features ? low on-resistance. ? ultrahigh-speed switching. ? 2.5v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-...
Description P-Channel Silicon MOSFET

File Size 53.90K  /  4 Page

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    3LP01N

Sanyo Semicon Device
Part No. 3LP01N
OCR Text ultrahigh-speed switching applications p-channel silicon mosfet features ? low on-resistance. ? ultrahigh-speed switching. ? 2.5v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-...
Description P-Channel Silicon MOSFET

File Size 56.55K  /  4 Page

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    KV2141 KV2121

Microsemi Corporation
Part No. KV2141 KV2121
OCR Text ...modulators applications ultrahigh q and excellent large signal handling capabilities, along with a greater than 4 to 1 capacitance ratio, is obtained by tuning from 4 to 20 volts of reverse bias. these products are ideal for l...
Description (KV2111 - KV2161) VARACTOR DIODES Microwave Hyperabrupt Junction

File Size 89.60K  /  2 Page

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    KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30

Microsemi Corporation
MICROSEMI CORP-LOWELL
Part No. KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30
OCR Text ...volt tuning range is possible. ultrahigh q and excellent large signal handling capabilities, along with a 2 to 1 capacitance ratio, is obtained by tuning from 9 to 20 volts of reverse bias. linear, wide deviation tuning of vcxo/tcxo?s an...
Description VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction
UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

File Size 85.40K  /  4 Page

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    AD8009 AD8009AR AD8009AR-REEL AD8009ART AD8009ART-REEL AD8009ART-REEL7 AD8009-EB

Analog Devices, Inc.
AD[Analog Devices]
Part No. AD8009 AD8009AR AD8009AR-REEL AD8009ART AD8009ART-REEL AD8009ART-REEL7 AD8009-EB
OCR Text Ultrahigh Speed 5,500 V/ s Slew Rate, 4 V Step, G = +2 545 ps Rise Time, 2 V Step, G = +2 Large Signal Bandwidth 440 MHz, G = +2 320 MHz, G = +10 Small Signal Bandwidth (-3 dB) 1 GHz, G = +1 700 MHz, G = +2 Settling Time 10 ns to 0.1%, 2 V ...
Description 1 GHz/ 5/500 V/us Low Distortion Amplifier
1 GHz, 5,500 V/us Low Distortion Amplifier

File Size 227.83K  /  12 Page

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    CPH6301

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. CPH6301
OCR Text ultrahigh-Speed Switching Applications Features * Low ON resistance. * ultrahigh-speed switching. * 2.5V drive. Package Dimensions unit:mm 2151 [CPH6301] 6 5 4 0.6 0 to 0.1 0.6 1.6 2.8 1 2 3 0.95 1 : Drain...
Description ultrahigh-Speed Switching Applications

File Size 215.94K  /  4 Page

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    CPH6302

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. CPH6302
OCR Text ultrahigh-Speed Switching Applications Features * Low ON resistance. * ultrahigh-speed switching. * 4V drive. Package Dimensions unit:mm 2151 [CPH6302] 6 5 4 0.6 0 to 0.1 0.6 1.6 2.8 1 2 3 0.95 1 : Drain 2...
Description ultrahigh-Speed Switching Applications

File Size 197.83K  /  4 Page

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    CPH6306

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. CPH6306
OCR Text ultrahigh-Speed Switching Applications Features * Low ON resistance. * ultrahigh-speed switching. * 4V drive. Package Dimensions unit:mm 2151A [CPH6306] 0.2 0.05 2.9 6 5 4 0.15 0.6 1 2 3 0.95 0.6 1.6 2.8 0.4 Spec...
Description ultrahigh-Speed Switching Applications

File Size 40.90K  /  4 Page

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    2SJ585LS

Sanyo Semicon Device
Part No. 2SJ585LS
OCR Text ultrahigh-Speed Switching Applications Features * Low ON-resistance. * ultrahigh-speed switching. * Micaless package facilitating mounting. Package Dimensions unit:mm 2078B [2SJ585LS] 10.0 3.5 7.2 4.5 2.8 3.2 16.1 16...
Description P-Channel Silicon MOSFET ultrahigh-Speed Switching Applications

File Size 41.53K  /  4 Page

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    SANYO
Part No. CPH3426
OCR Text ultrahigh-speed switching. ? 4v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss 100 v gate-to-source voltage v gss 20 v drain current (dc) i d 0.8 a drain c...
Description Medium Output MOSFETs

File Size 37.23K  /  4 Page

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