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vgdo Datasheet PDF File

For vgdo Found Datasheets File :: 363 Search Time::2.547ms
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				Korea Electronics (KEC) KEC[KEC(Korea Electronics)] KEC Holdings
Part No.	KTK597
OCR Text	... Temperature Range ) SYMBOL vgdo IG ID PD Tj Tstg RATING -20 10 1 100 150 -55 150 UNIT V mA mA mW J H N K N M N 1. SOURCE 2. DRAIN 3. GATE USM ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Gate-Drain Breakdown Volt...
Description	Condenser Microphone Application N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE)
File Size	44.88K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFC45V5964A C455964A1
OCR Text	...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature ...
Description	5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET
File Size	39.86K / 2 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGFL48V1920
OCR Text	...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Total power dissipation Channel temperature Storage temperature (Ta=25deg.C) Ratings -20 -10 107.1 175 -65 / +175 Unit V V W ...
Description	From old datasheet system 1.9-2.0GHz BAND 60W GaAs FET
File Size	324.67K / 6 Page	View it Online	Download Datasheet

				Philips
Part No.	PN4393 PN4391 PN4391_4392_4393_CNV_2
OCR Text	...5 to+150 150 mW C C VDS -VGSO -vgdo IG max. max. max. max. 40 40 40 50 V V V mA April 1989 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors THERMAL RESISTANCE From junction to ambien...
Description	N-channel silicon field-effect transistors From old datasheet system
File Size	28.87K / 6 Page	View it Online	Download Datasheet

				Philips Semiconductors / NXP Semiconductors
Part No.	J109 J108-9-10_2
OCR Text	...stem (IEC 134). SYMBOL VDS VGSO vgdo IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 50 ...
Description	From old datasheet system N-channel silicon junction FETs
File Size	30.60K / 7 Page	View it Online	Download Datasheet

				Sanyo
Part No.	2SK212 1016
OCR Text	...ture Storage Temperature Symbol vgdo IG ID PD Tj Tstg Conditions 3.0 3.8nom 1 : Drain 2 : Source 3 : Gate SANYO : SPA 0.7 0.7 Ratings -20 10 20 200 125 -55 to +125 Unit V mA mA mW C C Electrical Characteristics at Ta =...
Description	N-Channel Junction Silicon FET FM Tuner Applications From old datasheet system
File Size	154.82K / 5 Page	View it Online	Download Datasheet

				OKI
Part No.	KGF1165
OCR Text	...IN PO RLIN Condition VGS = -3 V vgdo = -7 V VDS = 3 V, VGS = -2 V VDS = 3 V, VGS = 0 V (1), PIN = 3 dBm VDS = 3 V, IDS = 400 mA VDS = 3 V, IDS = 15 mA (1) (1), PIN = -10 dBm (1), PIN = 3 dBm (*1), PIN = -20 dBm Unit mA mA mA mA mA V mS ...
Description	Medium-Power Amplifier From old datasheet system
File Size	70.77K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors
Part No.	J113 J112 J111
OCR Text	...ot Tstg Tj max. max. VDS -VGSO -vgdo IG max. max. max. max. J111; J112; J113 40 V 40 V 40 V 50 mA 400 mW -65 to + 150 C 150 C 250 K/W J112 1 1 5 40 1 5 50 J113 1 1 2 40 0.5 3 100 nA nA mA V V V July 1993 3 Philips S...
Description	RES CURRENT SENSE .005 OHM .75W N-channel silicon field-effect transistors
File Size	35.00K / 6 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	MGFS45V2123 S452123
OCR Text	...AXIMUM RATINGS (Ta=25C) Symbol vgdo VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature *1 < Keep safety firs...
Description	2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET From old datasheet system 2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
File Size	24.72K / 2 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NES1823P-140
OCR Text	...age Temperature Symbol VDS VGSO vgdo ID IG Ptot Note Ratings 19 -7 -22 76 440 270 175 -65 to +175 Unit V V V A mA W C C Tch Tstg Note TC = +25 C RECOMMENDED OPERATING CONDITIONS Parameter Drain to Source Voltage Gain Compre...
Description	140 W L, S-BAND PUSH-PULL POWER GaAs MES FET
File Size	45.38K / 8 Page	View it Online	Download Datasheet

For vgdo Found Datasheets File :: 363 Search Time::2.547ms
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