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  vgdo Datasheet PDF File

For vgdo Found Datasheets File :: 363    Search Time::2.547ms    
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    KTK597

Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
Part No. KTK597
OCR Text ... Temperature Range ) SYMBOL vgdo IG ID PD Tj Tstg RATING -20 10 1 100 150 -55 150 UNIT V mA mA mW J H N K N M N 1. SOURCE 2. DRAIN 3. GATE USM ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Gate-Drain Breakdown Volt...
Description Condenser Microphone Application
N CHANNEL JUNCTION FIFLD EFFFCT TRANSISTOR (CONDENSER MICROPHONE)

File Size 44.88K  /  5 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFC45V5964A C455964A1
OCR Text ...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO ID IGR IGF PT Tch Tstg Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature Storage temperature ...
Description 5.9 - 6.4 GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET

File Size 39.86K  /  2 Page

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    MGFL48V1920

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGFL48V1920
OCR Text ...BSOLUTE MAXIMUM RATINGS Symbol vgdo VGSO PT *1 Tch Tstg Parameter Gate to drain voltage Gate to source voltage Total power dissipation Channel temperature Storage temperature (Ta=25deg.C) Ratings -20 -10 107.1 175 -65 / +175 Unit V V W ...
Description From old datasheet system
1.9-2.0GHz BAND 60W GaAs FET

File Size 324.67K  /  6 Page

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    Philips
Part No. PN4393 PN4391 PN4391_4392_4393_CNV_2
OCR Text ...5 to+150 150 mW C C VDS -VGSO -vgdo IG max. max. max. max. 40 40 40 50 V V V mA April 1989 2 Philips Semiconductors Product specification N-channel silicon field-effect transistors THERMAL RESISTANCE From junction to ambien...
Description N-channel silicon field-effect transistors
From old datasheet system

File Size 28.87K  /  6 Page

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    Philips Semiconductors / NXP Semiconductors
Part No. J109 J108-9-10_2
OCR Text ...stem (IEC 134). SYMBOL VDS VGSO vgdo IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 50 ...
Description From old datasheet system
N-channel silicon junction FETs

File Size 30.60K  /  7 Page

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    Sanyo
Part No. 2SK212 1016
OCR Text ...ture Storage Temperature Symbol vgdo IG ID PD Tj Tstg Conditions 3.0 3.8nom 1 : Drain 2 : Source 3 : Gate SANYO : SPA 0.7 0.7 Ratings -20 10 20 200 125 -55 to +125 Unit V mA mA mW C C Electrical Characteristics at Ta =...
Description N-Channel Junction Silicon FET FM Tuner Applications
From old datasheet system

File Size 154.82K  /  5 Page

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    OKI
Part No. KGF1165
OCR Text ...IN PO RLIN Condition VGS = -3 V vgdo = -7 V VDS = 3 V, VGS = -2 V VDS = 3 V, VGS = 0 V (*1), PIN = 3 dBm VDS = 3 V, IDS = 400 mA VDS = 3 V, IDS = 15 mA (*1) (*1), PIN = -10 dBm (*1), PIN = 3 dBm (*1), PIN = -20 dBm Unit mA mA mA mA mA V mS ...
Description Medium-Power Amplifier
From old datasheet system

File Size 70.77K  /  7 Page

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    J113 J112 J111

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. J113 J112 J111
OCR Text ...ot Tstg Tj max. max. VDS -VGSO -vgdo IG max. max. max. max. J111; J112; J113 40 V 40 V 40 V 50 mA 400 mW -65 to + 150 C 150 C 250 K/W J112 1 1 5 40 1 5 50 J113 1 1 2 40 0.5 3 100 nA nA mA V V V July 1993 3 Philips S...
Description RES CURRENT SENSE .005 OHM .75W
N-channel silicon field-effect transistors

File Size 35.00K  /  6 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFS45V2123 S452123
OCR Text ...AXIMUM RATINGS (Ta=25C) Symbol vgdo VGSO ID IGR IGF PT Tch Parameter Gate to drain voltage Gate to source voltage Drain current Reverse gate current Forward gate current Total power dissipation Channel temperature *1 < Keep safety firs...
Description 2.1 - 2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system
2.1~2.3GHz BAND 30W INTERNALLY MATCHD GaAs FET

File Size 24.72K  /  2 Page

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    NES1823P-140

NEC Corp.
NEC[NEC]
Part No. NES1823P-140
OCR Text ...age Temperature Symbol VDS VGSO vgdo ID IG Ptot Note Ratings 19 -7 -22 76 440 270 175 -65 to +175 Unit V V V A mA W C C Tch Tstg Note TC = +25 C RECOMMENDED OPERATING CONDITIONS Parameter Drain to Source Voltage Gain Compre...
Description 140 W L, S-BAND PUSH-PULL POWER GaAs MES FET

File Size 45.38K  /  8 Page

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For vgdo Found Datasheets File :: 363    Search Time::2.547ms    
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