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MICROSEMI[Microsemi Corporation]
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| Part No. |
SD1127 MSC0936
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| OCR Text |
...127
RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS
Features
* * * DESIGNED FOR VHF MILITARY AND COMMERCIAL EQUIPMENT 4.0 WATTS (MIN) WIT...TO ISOLATE THE COLLECTOR LEAD ALLOWING A GROUNDED EMITTER CONFIGURATION FOR HIGH GAIN AND EXCELLENT ... |
| Description |
RF & MICROWAVE TRANSISTORS VHF COMMUNICATIONS
From old datasheet system
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| File Size |
104.18K /
3 Page |
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Agilent Technologies
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| Part No. |
ATF21186
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| OCR Text |
... oscillators operating over the VHF, UHF, and microwave frequency ranges. High gain with two volt operation makes this part attractive for l...to +150
Notes: 1. Operation of this device above any one of these parameters may cause permanent da... |
| Description |
TRANSISTOR,JFET,N-CHANNEL,5V V(BR)DSS,80MA I(DSS),MICRO-X
From old datasheet system
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| File Size |
57.34K /
8 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
2N4427 MSC1301
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| OCR Text |
...* * Silicon NPN, To-39 packaged VHF/UHF Transistor 1 Watt Minimum Power Output @ 175 MHz 500 MHz Current-Gain Bandwidth Product @ 50mA Power Gain, GPE = 10dB (Min) @ 175 MHz
1. Emitter 2. Base 3. Collector
TO-39 DESCRIPTION:
Silicon ... |
| Description |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
From old datasheet system
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| File Size |
243.43K /
6 Page |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
SD1446 2805
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| OCR Text |
VHF APPLICATIONS
.50 .12. .EFFI .COMMON .GOLD .P
MHz 5 VOLTS CIENCY 55% EMITTER METALLIZATION OUT = 70 W MIN. WITH 10 dB GAIN
.380 4L...to +150
V V V A W C C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
November 1992
... |
| Description |
From old datasheet system
RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS
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| File Size |
58.38K /
5 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
MT3S05T
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| OCR Text |
VHF~UHF Band Low Noise Amplifier Applications
* * * Sutable for use in an OSC Low noise figure NF = 1.4dB Excellent collector current linea...to improve the quality and reliability of its products. Nevertheless, semiconductor devices in gener... |
| Description |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
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| File Size |
74.56K /
3 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
MT3S08T
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| OCR Text |
VHF~UHF Band Low Noise Amplifier Applications
* * Sutable for use in an OSC Low noise figure NF = 1.4dB |S21e|2 = 10.5dB (@1 V/5 mA/1 GHz) ...to improve the quality and reliability of its products. Nevertheless, semiconductor devices in gener... |
| Description |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS
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| File Size |
73.26K /
3 Page |
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it Online |
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Price and Availability
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