...55 to +150
Unit V
V A A A w C C
2
2SK1161, 2SK1162
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1161 V(BR)DSS 2SK1162 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G =...
Description
Silicon N Channel MOS FET Silicon N-Channel MOS FET
...55 to +150
Unit V
V A A A w C C
2
2SK1163, 2SK1164
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1163 V(BR)DSS 2SK1164 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G =...
...55 to +150
Unit V
V A A A w C C
2
2SK1165, 2SK1166
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1165 V(BR)DSS 2SK1166 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G =...
...55 to +150
Unit V
V A A A w C C
2
2SK1167, 2SK1168
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1167 V(BR)DSS 2SK1168 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G =...
...55 to +150
Unit V
V A A A w C C
2
2SK1169, 2SK1170
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Symbol Min 2SK1169 V(BR)DSS 2SK1170 V(BR)GSS I GSS 450 500 30 -- -- -- -- -- -- 10 250 V A A I G =...
...0 -55 to +150
Unit V V A A A w C C
2
2SK2007
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 250 30 -- -...
...45 to +150
Unit V
V mA mA w w C C
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage 2SK213 2SK214 2SK215 2SK216 Gate to source breakdown voltag Gate to source voltage Drain to source saturation voltage F...
Description
Silicon N-Channel MOS FET 硅N沟道场效应晶体管 Silicon N Channel MOS FET
...0 -55 to +150
Unit V V A A A w C C
Electrical Characteristics (Ta = 25C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 150 20 -- -- 2.0 -- 4.0 -...
...000; f2 = 2000.1 VDS (V) 26 PL (w) 30 (PEP) Gp (dB) >10 D (%) >30 dim (dBc) -25
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGS ID Tstg Tj PARAMETER drain-source voltage gate-source voltage...
...; f2 = 1990.1 VCE (V) 26 26 PL (w) 35 35 (PEP) Gp (dB) typ. 9.5 9.5 C (%) typ. 43 33 dim (dBc) - -30
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER ...