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.5vi Datasheet PDF File

For .5vi Found Datasheets File :: 81 Search Time::2.594ms
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					TY Semiconductor Co., Ltd
Part No.	RT1N141M
OCR Text	... dc forward current gain v ce =5vi c =10ma 50 c to e saturation voltage i c =10mai b =0.5ma 0.1 0.3 v ? input on voltage v ce =0.2vi c =5ma 1.5 3.0 v ? input off voltage v ce =5vi c =100a 0.8 1....
Description	RT1N141X is a one chip transistor with built-in bias resistor,PNP type is RT1P141X
File Size	149.32K / 2 Page	View it Online	Download Datasheet

					MINCO TECHNOLOGY LABS INC
Part No.	MTL2420RU.003.A MTL2420RU.001.S MTL2420RU.004.S MTL2420RU.003.S
OCR Text	...tor breakdown voltage v (br)eco 5vi c = 0ma, i e = 100 a, i f = 0 collector-emitter dark current +100 c i ceo1 i ceo2 100 100 na na v ce = 20v, i f = 0ma v ce = 20v,...
Description	1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER
File Size	70.64K / 2 Page	View it Online	Download Datasheet

					Isahaya Electronics Corporation
Part No.	INA6006AC1
OCR Text	... dc forward current gain1 vce=-5vi c =-1ma 45 - - - 2 dc forward current gain2 vce=-5vi c =-10ma 90 - 270 - 3 dc forward current gain3 vce=-5vi c =-50ma 45 - - - vce(sat)1 c to e saturation voltage1 i c =-10mai b ...
Description	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
File Size	154.83K / 4 Page	View it Online	Download Datasheet

					Isahaya Electronics Corporation
Part No.	INA6006AP1
OCR Text	... dc forward current gain1 vce=-5vi c =-1ma 45 - - - 2 dc forward current gain2 vce=-5vi c =-10ma 90 - 270 - 3 dc forward current gain3 vce=-5vi c =-50ma 45 - - - vce(sat)1 c to e saturation voltage1 i c =-10mai b ...
Description	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
File Size	159.06K / 4 Page	View it Online	Download Datasheet

					Zetex Semiconductors
Part No.	FMMT49706 FMMT497-06
OCR Text	...se breakdown voltage v (br)ebo 5vi e = 100 a collector cut- off current i cbo 100 na v cb = 250v collector cut- off current i ces 100 na v ces = 250v emitter cut-off current i ebo 100 na v eb = 4v collector-emitter saturation voltage...
Description	SOT23 NPN silicon planar high voltage high performance transistor
File Size	151.12K / 6 Page	View it Online	Download Datasheet

					DIODES INC
Part No.	FMMT493ATC
OCR Text	...ase breakdown voltage v (br)ebo 5vi e = 100 a collector cut-off current i cbo 100 na v cb = 45v collector cut-off current i ces 100 na v ces = 45v emitter cut-off current i ebo 100 na v eb =4v collector - emitter saturation voltage v ce(s...
Description	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
File Size	137.39K / 6 Page	View it Online	Download Datasheet

					AVAGO TECHNOLOGIES LIMITED
Part No.	ACPL-W314-500E
OCR Text	... reverse breakdown voltage bv r 5vi r = 10 a input capacitance c in 60 pf f = 1 mhz, v f = 0 v table 6. switching specifi cations (ac) over recommended operating conditions unless otherwise specifi ed. parameter symbol min. typ. max. uni...
Description	ACPL-P314 and ACPL-W314 0.6 Amp Output Current IGBT Gate Driver Optocoupler
File Size	208.57K / 14 Page	View it Online	Download Datasheet

					Isahaya Electronics Corporation Isahaya Electronics Cor...
Part No.	INC6006AS1
OCR Text	...dc forward current gain1 v ce =5vi c =1ma 72 - - - h fe2 dc forward current gain2 v ce =5vi c =10ma 72 - 330 - h fe3 dc forward current gain3 v ce =5vi c =50ma 27 - - - v ce(sat)1 c to e saturation voltage1 i c ...
Description	FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
File Size	141.30K / 4 Page	View it Online	Download Datasheet

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