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    2SA2087

ROHM[Rohm]
Part No. 2SA2087
OCR Text ...ns (Unit : mm) ATV 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) (1) Emitter (2) Collector (3) Base 1.05 14.5 ...10 1000 10ms 1ms 500s COLLECTOR CURRENT : IC (A) -1 100ms DC DC CURRENT GAIN : hFE SW...
Description Power transistor

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    2SA2088

ROHM[Rohm]
Part No. 2SA2088
OCR Text 0.5A) 2SA2088 !Features 1) High speed switching. (Tf : Typ. : 60ns at IC = -500mA) 2) Low saturation voltage, typically (Typ. : -150mV at ...10 40 110 60 - - - - pF ns ns ns 2 1 Non repetitive pulse 2 See Switching charactaristic...
Description Medium power transistor ( 60V/0.5A)
Medium power transistor (−60V, −0.5A)
Medium power transistor (-60V, -0.5A)

File Size 81.84K  /  4 Page

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    2SA2091S 2SA2091STPQ

TE Connectivity, Ltd.
ROHM[Rohm]
Part No. 2SA2091S 2SA2091STPQ
OCR Text ...pically (Typ. : -200mV at IC = -0.5A, IB = -50mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5...10 1000 COLLECTOR CURRENT : IC (A) SWITCHING TIME : SW(ns) -1 100ms 10ms 1ms DC Tstg ...
Description 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR SPT, SC-72, 3 PIN
Medium power transistor (60V/ 1A)
Medium power transistor (−60V, −1A)
Medium power transistor (-60V, -1A)

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    2SA2093

ROHM[Rohm]
Part No. 2SA2093
OCR Text .... : -200mV at IC = -1.0A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5880 !Externa...10 1000 COLLECTOR CURRENT : IC (A) SWITCHING TIME : SW(ns) -1 100ms DC Tstg DC CURR...
Description Power transistor ( 60V/2A)
Power transistor (−60V, −2A)
Power transistor (-60V, -2A)

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    2SA2097

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2097
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation: VCE (sat) = -0.27 V (max) High-speed switching: tf = 55 ns (typ.) U...10 -0.5 1 20 150 -55 to 150 Unit V V V A A JEDEC W C C SC-64 2-7J1A JEITA TOSHIBA Weig...
Description High-Speed Swtching Applications DC-DC Converter Applications

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    2SA2113

ROHM[Rohm]
Part No. 2SA2113
OCR Text ...yp. : -200mV at IC = -1A, IB = -0.1A) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SC5916 !Externa...10 COLLECTOR CURRENT : IC (A) 1000 Ta=25C VCC= -25V IC/IB=10/1 Tstg 100 1000 DC CURRENT GAIN :...
Description Medium power transistor ( 30V/2A)
Medium power transistor (−30V, −2A)
Medium power transistor (-30V, -2A)

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    2SA473

Wing Shing Computer Components
Part No. 2SA473
OCR Text ...T Test Condition VCB= -30V , IE=0 VEB= -5V , IC=0 VCE= -1V , IC=-0.1A IC=-2A , IB=-0.2A VCE= -2V , IC=-0.5A Min Typ Max -10 10 240 -0.8 100 Unit A A 70 V MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wing...
Description PNP EPITAXIAL SILICON TRANSISTOR(LOW FREQUENCY POWER AMPLIFIER)

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    2SA608 2SA608N 2SC536N

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA608 2SA608N 2SC536N
OCR Text ...current capacity and wide ASO. 0.45 3.5 1.4max 0.6 1.27 4.0max 13.7 14.0 0.5 0.45 4.5 0.44 1 2.5 2 2.5 ...10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 10700TS (KOTO) TA-2543 No.6324-1/4 2SA608N/2S...
Description    Low-Frequency General-Purpose Amplifier Applications
PNP/NPN Epitaxial Planar Silicon Transistors
PNP Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications
NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications

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    2SA673A 2SA673AK 2SA673A_K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673A 2SA673AK 2SA673A_K
OCR Text ... PC Tj Tstg Ratings -50 -50 -4 -0.5 0.4 150 -55 to +150 Unit V V V A W C C 2 2SA673A(K) Electrical Characteristics (Ta = 25C) Item C...10 -- -- -- -- Typ -- -- -- -- -- -0.64 -0.2 -0.87 -- -- 120 0.3 0.6 0.4 Max -- -- -- -0.5 -0.5 -- -...
Description Silicon PNP Epitaxial

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    2SA673 2SA673A

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673 2SA673A
OCR Text ...-- -- 60 10 -- Typ -- -- -- -- -0.2 -- -- Max -- -- -- -0.5 -0.6 320 -- 2SA673A Min -50 -50 -4 -- -- 60 10 -- Typ -- -- -- -- -0.2 -- -- Max -- -- -- -0.5 -0.6 320 -- V Unit V V V A V Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = ...
Description Silicon PNP Epitaxial(小信号晶体管)

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