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  0.0162 Datasheet PDF File

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    2SA2193

Isahaya Electronics Corporation
Part No. 2SA2193
OCR Text 0.425 1.25 0.425 1.30 0.65 2.0 0.65 3 2 1 Unit:mm 0.3 0.9 0.7 0.15 0 0.1 TERMINAL CONNECTOR 1 : BASE 2 : EMITTER 3 : COLLECTOR JEITA : SC-70 JEDEC : MARKING 2 TYPE NAME W hFE ITEM
Description FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

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    2SA821S

TRANSYS Electronics Limited
Part No. 2SA821S
OCR Text ...LECTOR Power dissipation PD: 0.25 W (Tamb=25) 3. BASE Collector current ICM: -0.03 A Collector-base voltage V(BR)CBO : -210 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=2...
Description Plastic-Encapsulated Transistors

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    2SA821

TRANSYS Electronics Limited
Part No. 2SA821
OCR Text ...P) TO-92 1. EMITTER PCM : 0.25 W (Tamb=25) 2. COLLECTOR Collector current ICM : -0.03 A Collector-base voltage V V(BR)CBO : -210 Operating and storage junction temperature range TJ, Tstg: -55 to +150 3. BASE 123 ELECTR...
Description Plastic-Encapsulated Transistors

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    2SA844

TRANSYS Electronics Limited
Part No. 2SA844
OCR Text ...P) TO-92 1. EMITTER PCM : 0.3 W (Tamb=25) Collector current ICM: -0.1 A Collector-base voltage V(BR)CBO : -55 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 2. COLLECTOR 3. BASE 123 ELECTRICAL CHA...
Description Plastic-Encapsulated Transistors

File Size 62.80K  /  1 Page

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    2SA94907 2SA949

Toshiba Semiconductor
Part No. 2SA94907 2SA949
OCR Text ...Low output capacitance: Cob = 5.0 pF (max) High transition frequency: fT = 120 MHz (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base c...
Description Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications

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    2SB141106 2SB1411

Toshiba Semiconductor
Part No. 2SB141106 2SB1411
OCR Text ...Tstg Rating -100 -100 -7 -2 -3 -0.5 2.0 20 150 -55 to 150 Unit V V V A A W C C JEDEC JEITA TOSHIBA SC-67 2-10R1A Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/vol...
Description Silicon PNP Triple Diffused Type

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    2SC234703 2SC2347

Toshiba Semiconductor
Part No. 2SC234703 2SC2347
OCR Text ...Test Condition VCB = 15 V, IE = 0 VEB = 3 V, IC = 0 IC = 1 mA, IB = 0 VCE = 3 V, IC = 8 mA VCE = 10 V, IC = 8 mA VCB = 10 V, IE = 0, f = 1 MHz VCB = 10 V, IC = 8 mA, f = 30 MHz Weight: 0.21 g (typ.) Min 3/4 3/4 15 20 650 3/4 3/4 Ty...
Description Transistor Silicon NPN Epitaxial Planar Type TV UHF Oscillator Applications TV VHF Mixer Applications

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    2SC2510A

Toshiba Semiconductor
Part No. 2SC2510A
OCR Text ...TEST CONDITION IC = 100mA, IB = 0 IC = 100mA, VEB = 0 IE = 1mA, IC = 0 VCE = 5V, IC = 10A * VCB = 28V, IE = 0 f = 1MHz VCC = 28V, f1 = 28.000MHz, f2 = 28.001MHz Iidle = 100mA Po = 150WPEP (Fig.) MIN. 35 55 4 10 -- 12.2 -- 35 -- -- -- TYP. -...
Description SILICON NPN EPITAXIAL PLANAR TYPE

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    2SC287807 2SC2878

Toshiba Semiconductor
Part No. 2SC287807 2SC2878
OCR Text ... TO-92 SC-43 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition f...
Description Silicon NPN Epitaxial Type For Muting and Switching Applications

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    2SC2879A

Toshiba, Corp.
Toshiba Semiconductor
Part No. 2SC2879A
OCR Text ...TEST CONDITION IC = 100mA, IB = 0 IC = 100mA, VEB = 0 IE = 1mA, IC = 0 VCE = 5V, IC = 10A VCB = 12.5V, IE = 0 f = 1MHz VCC = 12.5V, f1 = 28.000MHz f2 = 28.001MHz Iidle = 100mA Po = 100WPEP.(Fig.) MIN. 18 45 4 10 -- 13.0 -- 35 -- -- -- TYP. ...
Description SILICON NPN EPITAXIAL PLANAR TYPE 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) 硅型瑞展230MHz的办学线性功率放大器应用(低电源电压使用

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