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0.8a -0.6a Datasheet PDF File

For 0.8a -0.6a Found Datasheets File :: 3578 Search Time::1.969ms
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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2525A
OCR Text	...rent Fall time CONDITIONS VBE = 0 TYP. 8 0.2 MAX. 1500 800 12 30 125 5.0 0.35 UNIT V V A A W V A s Tmb 25 C IC = 8.0 A; IB = 1.6 A ICM =...8A 6A 5A 4A 4 12 11 10 9 8 7 6 5 4 3 2 1 0 ts, tf / us 32 kHz BU2525A ts IC = 8A 7A 0...
Description	Silicon Diffused Power Transistor
File Size	51.22K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2525DF BU2508DF
OCR Text	...t Storage time CONDITIONS VBE = 0 V TYP. 8.0 3.0 MAX. 1500 800 12 30 45 5.0 4.0 UNIT V V A A W V A s Ths 25 C IC = 8.0 A; IB = 1.6 A ICs...8A 6A 5A 4A 4 12 11 10 9 8 7 6 5 4 3 2 1 0 ts, tf / us 32 kHz BU2525AF ts IC = 8A 7A ...
Description	Silicon Diffused Power Transistor
File Size	71.42K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2525DW
OCR Text	...t Storage time CONDITIONS VBE = 0 TYP. 8 3.0 MAX. 1500 800 12 30 125 5.0 4.0 UNIT V V A A W V A s Tmb 25 C IC = 8.0 A; IB = 1.6 A ICsat ...8A 6A 5A 4A 0 1 2 IB / A 3 4 1 0.1 Fig.5. Typical DC current gain. hFE = f (IC) parameter VCE ...
Description	Silicon Diffused Power Transistor
File Size	74.81K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BU2525DX
OCR Text	...t Storage time CONDITIONS VBE = 0 V Ths 25 C IC = 8.0 A; IB = 1.6 A ICsat = 8.0 A; IB(end) = 1.1 A TYP. 8.0 3.0 MAX. 1500 12 30 45 5.0 800 ...8A 6A 5A 4A 4 12 11 10 9 8 7 6 5 4 3 2 1 0 ts, tf / us 32 kHz BU2525AF ts IC = 8A 7A ...
Description	Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR
File Size	73.42K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BU2527DF
OCR Text	...t Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 45 5.0 2.0 UNIT V V A A W V A s Ths 25 C IC = 8.0 A; IB = 1.6 A f =...8A 0.8 0.7 0.6 0.5 0.4 0.1 1 IC / A 10 IC/IB= 3 4 5 1 6A 5A IC = 4 A 0.1 0.1 1 IB / A 1...
Description	Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR
File Size	80.99K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BU2527DX
OCR Text	...t Storage time CONDITIONS VBE = 0 V TYP. 6.0 1.7 MAX. 1500 800 12 30 45 5.0 2.0 UNIT V V A A W V A s Ths 25 C IC = 8.0 A; IB = 1.6 A f =...8A 0.8 0.7 0.6 0.5 0.4 0.1 1 IC / A 10 IC/IB= 3 4 5 1 6A 5A IC = 4 A 0.1 0.1 1 IB / A 1...
Description	Silicon Diffused Power Transistor
File Size	83.04K / 7 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	BU408 BU406H BU406 BU406TU
OCR Text	...est Condition VCE = 400V, VBE = 0 VCE = 250V, VBE = 0 VCE = 250V, VBE = 0 @ TC=150C VBE = 6V, IC = 0 IC = 5A, IB = 0.5A IC = 5A, IB = 0.8a IC = 6A, IB = 1.2A IC = 5A, IB = 0.5A IC = 5A, IB = 0.5A IC = 6A, IB = 1.2A VCE = 10V, IC = 0.5A IC =...
Description	NPN Epitaxial Silicon Transistor High Voltage Switching
File Size	46.37K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFU2905Z IRFR2905 IRFR2905Z
OCR Text	...FR2905Z Max. 59 42 42 240 110 0.72 20 I-Pak IRFU2905Z Units A Absolute Maximum Ratings Parameter ID @ TC = 25C Continuous Drain...8A TOP 160 RG 20V VGS D.U.T IAS tp + V - DD A 120 0.01 80 Fig 12a. Unc...
Description	55V Single N-Channel HEXFET Power MOSFET in a D-Pak package 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package AUTOMOTIVE MOSFET
File Size	209.23K / 11 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFU3704 IRFR3704
OCR Text	... Max. 20 20 75 63 300 90 62 0.58 -55 to + 175 Units V V A W W mW/C C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case ...8A BOTTOM 28.4A TOP Current Sampling Resistors 400 Fig 14a&b. Basic Gate Charge Test Circui...
Description	Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A? Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A) Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A?)
File Size	113.36K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFU3707 IRFR3707 IRFR3707PBF IRFR3707TRR IRFU3707PBF
OCR Text	... Max. 30 20 61 51 244 87 61 0.59 -55 to + 175 Units V V A W W mW/C C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case ...8A --- nC VDS = 15V --- VGS = 4.5V 27 VGS = 0V, VDS = 15V --- VDD = 15V --- ID = 24.8A ns --- RG = ...
Description	30V Single N-Channel HEXFET Power MOSFET in a I-Pak package 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?) Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A) Power MOSFET(Vdss=30V, Rds(on)max=13mohm, Id=61A?
File Size	134.17K / 9 Page	View it Online	Download Datasheet

For 0.8a -0.6a Found Datasheets File :: 3578 Search Time::1.969ms
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