| |
|
 |
Electronic Theatre Controls, Inc.
|
| Part No. |
RT0603
|
| OCR Text |
... / low noise high accuracy ( 0.1%, 0.5%) overcoat internal electrode (ag-pd) alumina substrate resistor (nicr) external electrode (solder...10w 1/32w 1/10w 1/8w 1/20w 1/8w 1/5w operation temperature range -10 c to +85 c for precision typ... |
| Description |
Thin Film Chip Resistors
|
| File Size |
36.20K /
2 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFC40V5258_04 MGFC40V5258 MGFC40V525804
|
| OCR Text |
...
Unit: millimeters
24+/-0.3 (1) 0.6+/-0.15 R1.2
FEATURES
Class A operation Internally matched to 50(ohm) system High output power P1dB = 10W (TYP.) @ f=5.2 - 5.8 GHz High power gain GLP = 10 dB (TYP.) @ f=5.2 - 5.8GHz High power adde... |
| Description |
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
| File Size |
205.03K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFC40V5964_04 MGFC40V5964 MGFC40V596404
|
| OCR Text |
...es)
24+/-0.3 R1.25
2MIN
(1) 0.6+/-0.15
FEATURES
Class A operation Internally matched to 50(ohm) system High output power P1dB = 10W (TYP.) @ f=5.9~6.4GHz High power gain GLP = 10 dB (TYP.) @ f=5.9~6.4GHz High power added efficien... |
| Description |
5.9 ~ 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
| File Size |
203.96K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFC40V6472_04 MGFC40V6472 MGFC40V647204
|
| OCR Text |
...UTLINE DRAWING
24+/-0.3 R1.25 (1)
Unit: millimeters (inches)
FEATURES
Internally matched to 50 ohm system High output power P1dB = 10W (TYP.) @ f=6.4 - 7.2 GHz High power gain GLP =9 dB (TYP.) @ f=6.4 - 7.2 GHz High power added effi... |
| Description |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
| File Size |
186.32K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
NTE[NTE Electronics]
|
| Part No. |
NTE1288
|
| OCR Text |
... Pin5 Symbol Min VCC VO ICC 8 6.1 - Typ - 6.9 44 Max 18 7.7 50 Unit V V mA
Dynamic Characteristics: (TA = +25C, VCC = 14.4V, AV = 40dB un...10W, RL = 2 Bandwidth (-3dB) Harmonic Distortion Input Resistance (Pin1) Voltage Gain Open Loop Clos... |
| Description |
Integrated Circuit Audio Power Amplifier, 10W for Car Radio
|
| File Size |
71.26K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
NTE[NTE Electronics]
|
| Part No. |
NTE349
|
| OCR Text |
...ce Cob VCB = 15V, IE = 0, f = 0.1 to 1MHz - 35 70 pF hFE IC = 250mA, VCE = 5V 5 - - V(BR)CEO IC = 200mA, IB = 0 V(BR)EBO IE = 2.5mA, IC = 0 ...10W, f = 175MHz POUT = 10W, f = 175MHz Pout = 10W, f = 175MHz 5.2 - 50 - - - - 3 - dB W %
1.0... |
| Description |
Silicon NPN Transistor RF Power Amp, Driver
|
| File Size |
21.24K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
