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  1.50ghz Datasheet PDF File

For 1.50ghz Found Datasheets File :: 144    Search Time::1.562ms    
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    DM200-01-0 DM200-01-1 DM200-01-2

Finisar Corporation.
Part No. DM200-01-0 DM200-01-1 DM200-01-2
OCR Text 1/2 PRODUCT FEATURES * * * * * * * * High Performance CMLTM Supports multi-bit-rate application, from 9.95Gb/s to 11.1Gb/s Supports link le...50GHz ITU grid. "xxxx" is the channel ID as specified in Table 9 and Table 10. "0" indicates modulat...
Description 10Gb/s 200km Telecom CMLTM 13pin-GPO Butterfly Transmitter

File Size 260.69K  /  10 Page

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    DM80-01-0 DM80-01-1 DM80-01-2

Finisar Corporation.
Part No. DM80-01-0 DM80-01-1 DM80-01-2
OCR Text 1/2 PRODUCT FEATURES * * * * * * * * High Performance CMLTM Supports multi-bit-rate application, from 9.95Gb/s to 11.1Gb/s Supports link le...50GHz ITU grid. "xxxx" is the channel ID as specified in Table 9 and Table 10. "3" indicates modulat...
Description 10Gb/s 120km Telecom CMLTM 13pin-GPO Butterfly Transmitter

File Size 261.36K  /  10 Page

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    MSEBX945

Advanced Digital Logic, Inc.
Part No. MSEBX945
OCR Text 1.06GHz - 1.50ghz Features * * * * * * * * * * * * * * Intel(R) CoreTM2 Duo / CoreTMDuo / CoreTMSolo 1.06GHz - 1.50ghz Power Management 256MB - 2048MB DDR2-DRAM CRT / LCD interface on-board 10/100 Base-T LAN-Ethernet 1000 Base-T LAN-Ethern...
Description Duo / Core Solo 1.06GHz - 1.50ghz

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    EIA1414-6

Excelics Semiconductor, Inc.
Part No. EIA1414-6
OCR Text ...TS dBm dB 0.6 33 1800 2800 -1.0 4.5 2100 3500 -2.5 5.0 o dB % mA mA V C/W f = 14.00-14.50GHz VDS = 3 V, VGS = 0 V VDS = 3 V, IDS = 28mA 2) S.C.L. = Single Carrier Level. Note: 1) Tested with 100 Ohm gate resistor. 3) Ov...
Description 14.00-14.50 GHz 6-Watt Internally Matched Power FET

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    EIC0910-25

Excelics Semiconductor, Inc.
Part No. EIC0910-25
OCR Text ...B G1dB G PAE Id1dB IDSS VP RTH 1. Caution! ESD sensitive device. MIN 43 6 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ 5000mA Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, ...
Description 9.50-10.50 GHz 25-Watt Internally Matched Power FET

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    EIC0910-2

Excelics Semiconductor, Inc.
Part No. EIC0910-2
OCR Text ...VDS = 3 V, IDS = 10 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mount...50GHz 2-Watt Internally-Matched Power FET PERFORMANCE DATA Typical S-Parameters (T= 25C, 50 syst...
Description 9.50-10.50GHz 2-Watt Internally-Matched Power FET

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    EIC0910-4

Excelics Semiconductor, Inc.
Part No. EIC0910-4
OCR Text ...VDS = 3 V, IDS = 20 mA Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mount...50GHz 4-Watt Internally-Matched Power FET PERFORMANCE DATA Typical S-Parameters (T= 25C, 50 syst...
Description 9.50-10.50GHz 4-Watt Internally-Matched Power FET

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    EIC0910-5

Excelics Semiconductor, Inc.
Part No. EIC0910-5
OCR Text ... oC -65 to +150 oC 23W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, ...
Description 9.50-10.50GHz,5W Internally Matched Power FET

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    EIC0910-8

Excelics Semiconductor, Inc.
Part No. EIC0910-8
OCR Text ...dB % mA dBc mA V o C/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mount...50GHz 8-Watt Internally Matched Power FET PERFORMANCE DATA Typical S-Parameters (T= 25C, 50 syst...
Description 9.50-10.50GHz 8-Watt Internally Matched Power FET

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    RFMA1214-1W-Q7

Excelics Semiconductor, Inc.
Part No. RFMA1214-1W-Q7
OCR Text ...e Voltage Thermal Resistance 2 1 1 MIN 12.5 28.0 27.0 TYP MAX 14.5 UNITS GHz dBm dB 29.0 30.0 -41 -10 -15 180 800 7 220 1000 8 -0.3 9 -38 dBc dB dB mA mA V V o Drain Voltage -2.5 -30 C/W o Operating Base Plate ...
Description 12.50 - 14.50 GHz High-Gain Surface Mounted PA

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