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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FS2VS-14A
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| OCR Text |
...S = 0V ID = 1mA, VDS = 10V ID = 1a, VGS = 10V ID = 1a, VGS = 10V ID = 1a, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 700 30 -- -- 2 -- -- 0.72 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 7.47 7.47 1.2 270 30 5 10 12 33 21 1.0 ... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
39.08K /
4 Page |
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it Online |
Download Datasheet
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Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
Mitsubishi Electric Corporation
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| Part No. |
FS2AS-14A
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| OCR Text |
...S = 0V ID = 1mA, VDS = 10V ID = 1a, VGS = 10V ID = 1a, VGS = 10V ID = 1a, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 700 30 -- -- 2 -- -- 0.72 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 7.47 7.47 1.2 270 30 5 10 12 33 21 1.0 ... |
| Description |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 2 A, 700 V, 9.75 ohm, N-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
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| File Size |
43.35K /
4 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FS2AS-14A
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| OCR Text |
...S = 0V ID = 1mA, VDS = 10V ID = 1a, VGS = 10V ID = 1a, VGS = 10V ID = 1a, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz
Limits Min. 700 30 -- -- 2 -- -- 0.72 -- -- -- -- -- -- -- -- -- Typ. -- -- -- -- 3 7.47 7.47 1.2 270 30 5 10 12 33 21 1.0 ... |
| Description |
HIGH-SPEED SWITCHING USE
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| File Size |
38.42K /
4 Page |
View
it Online |
Download Datasheet |
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CDIL[Continental Device India Limited]
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| Part No. |
CRD13003BC
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| OCR Text |
...ltage **VCE (sat) IC=0.5A, IB=0.1a IC=1a, IB=0.25A IC=1.5A, IB=0.5A IC=1a, IB=0.25A,Tc=100C Base Emitter Saturation Voltage **VBE (sat) IC=0.5A, IB=0.1a IC=1a, IB=0.25A IC=1a, IB=0.25A, Tc=100C DYNAMIC CHARACTERISTICS DESCRIPTION Current Ga... |
| Description |
NPN SILICON POWER TRANSISTOR
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| File Size |
78.19K /
5 Page |
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it Online |
Download Datasheet |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
SBR13003B
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| OCR Text |
...saturation voltage ic=0.5a,ib=0.1a ic=1.0a,ib=0.25a ic=1.5a,ib=0.5a - - 0.3 0.5 1.0 v v be(sat) base -emitter saturation voltage ic=0.5a,ib=...700v vcb=700v,tc=100 - - 1.0 5.0 ma hfe dc current gain vce=2v,ic=0.5a vce=2v,ic=1.0a 10 5 - - 30 2... |
| Description |
High Voltage Fast -Switching NPN Power Transistor
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| File Size |
411.93K /
5 Page |
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it Online |
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Wuxi NCE Power Semiconducto...
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| Part No. |
NCE70R2K2I
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| OCR Text |
...ance r ds(on) v gs =10v, i d =1a 2200 2500 m ? dynamic characteristics forward transconductance g fs v ds = 20v, i d = 1a 2 s input capacitance c lss 190 pf output capacitance c oss 13 pf reverse transfer capac... |
| Description |
N-Channel Super Junction Power MOSFET
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| File Size |
610.73K /
8 Page |
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it Online |
Download Datasheet |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
SBN13003A1
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| OCR Text |
...saturation voltage ic=0.5a,ib=0.1a ic=1.0a,ib=0.25a ic=1.5a,ib=0.5a - - 0.5 1.0 3.0 v v be(sat) base -emitter saturation voltage ic=0.5a,ib=...700v vcb=700v,tc=100 - - 1.0 5.0 ma hfe dc current gain vce=2v,ic=1a vce=2v,ic=1.0a 8 3 - - 20 ton ... |
| Description |
High Voltage Fast-Switching NPN Power Transistor
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| File Size |
411.11K /
5 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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