...
i
ADJ V R set
Vo RL
D1 ont color='#FF0000'>1nont> 457
R1* 10 R set Vi
V o = ( Iset) (R L) = 10mV/ K R set = 230 R L = 10k
o
* Select ratio of R1 to R set to obtain zero dri ft i+ 2I set
6/10
LM134-LM234-LM334
Figure 5 : Low output Im...
Description
THREE TERMINAL ADJUSTABLE CURRENT SoURCES Three Terminal Adjustable Current Sources(三端可调电流 Three Terminal Adjustable Current Sources(涓??????垫?婧?
ont color='#FF0000'>1nont>/FDLL 914/A/B / 916/A/B / 4148 / 4448
Discrete PoWER & Signal Technologies
ont color='#FF0000'>1nont>/FDLL 914/A/B / 916/A/B / 4148 / 4448
CoLoR BAND MARKI...o TA - AMBIENT TEMPERATURE ( C)
0
50 100 150 Io - AVERAGE TEMPERATURE ( oC)
200
TRADEMAR...
...(1.6mm from case ) 10 lbf*in (1.ont color='#FF0000'>1nont>*m)
Units
A W W/C V V/ns C
Typical SMPS Topology:
l
PFC Boost
Notes
through are on page...o ss
100
8
10
C rss
4
1 1 10 100 1000
A
0 0 20 40
FoR TEST CIRCUIT SEE FIGU...
Description
Power MoSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A)
... (1.6mm from case) 10 lbf*in (1.ont color='#FF0000'>1nont>*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case...o te s : 1 . D u ty fa c to r D = t
PD M
t
1
t 2
1
/t
2
0.001 0.00001
2 . P...
...(1.6mm from case ) 10 lbf*in (1.ont color='#FF0000'>1nont>*m)
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RCS RJA Junction-to-Case Case...o U RC E 4 - D R A IN
14 .09 (.5 5 5 ) 13 .47 (.5 3 0 )
4 .06 (.16 0 ) 3 .55 (.14 0 )
3X 3X...
Description
N-Channel HEXFET Power MoSFET(N沟道 HEXFET 功率MoS场效应管)
...80 HYBRID CoUPLER 115V D 0V 15V ont color='#FF0000'>1nont> A C
1 2 8 7
50 SIGNAL GENERAToR
SP4740
B 50 ont color='#FF0000'>1nont> 0*1
3 4 6 5
6*5k oUTPUT 1*65k 0V
Fig. 3 Te...o. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067-0017, United States of America....
Description
1・3GHz 4256 PRESCALER WITH LoW CURRENT AND LoW RADIATIoN 4000/14000/40000 SERIES, PRESCALER, PDIP8 13GHz 4256 PRESCALER WITH LoW CURRENT AND LoW RADIATIoN
...(1.6mm from case ) 10 lbf*in (1.ont color='#FF0000'>1nont>*m)
Units
A W W/C V mJ A mJ V/ns C
www.irf.com
1
10/11/00
IRF630N/S/L
Electrical Characteri...o TE S :
0 .93 (.03 7 ) 0 .69 (.02 7 ) M BAM
3X
0.5 5 (.0 22) 0.4 6 (.0 18)
0 .3 6 (.0 1...
Description
Power MoSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MoSFET(减振钢板基本\u003d 200V的电压,的Rds(on)\u003d 0.30ohm,身份证\u003d 9.3A Power MoSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A) Power MoSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)