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0FH182J LT3680I P3100SC HFE472 M2002 HD64F3 P3100SC UC3842A
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  2.5-2.7ghz Datasheet PDF File

For 2.5-2.7ghz Found Datasheets File :: 676    Search Time::2.344ms    
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    HMC713MS8 HMC713MS8E

Hittite Microwave Corporation
Part No. HMC713MS8 HMC713MS8E
OCR Text ...cy: 1 dB with 54 dB Range Up To 2.7 GHz Fast Output Response Time Supply Voltage: +2.7 to +5.5V Power-Down Mode Excellent Stability over Temperature MSOP-8 SMT Package: 14.8 mm2 12 Functional Diagram General Description The HMC713MS...
Description 54 dB, LOGARITHMIC DETECTOR / CONTROLLER, 100 - 2700 MHz

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    EUDYNA[Eudyna Devices Inc]
Part No. EGN030MK
OCR Text ... a in Rating Limit 50 <6.1 >-2.2 200 120 -5 56.25 -65 to +175 250 y r Unit V V W oC oC Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Drain Breakdow...
Description High Voltage - High Power GaN-HEMT

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    NJG1695ME7

New Japan Radio
Part No. NJG1695ME7
OCR Text 2 1 6 7 8 9 10 11 12 13 14 18 17 16 15 decoder h=v ctl(h), l=v ctl(l) high isolation x-sp4t (dp8t) switch general description ...5~+4.5v low control voltage v ctl(h) =+1.35v min. high isolation 43db typ. @f=1.0ghz, p in...
Description High Isolation X-SP4T (DP8T) SWITCH

File Size 432.34K  /  12 Page

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    NJG1692NB2

New Japan Radio
Part No. NJG1692NB2
OCR Text 2-22 4 5 6 7 9 10 2 3 8 1 vdd pc1 pc2 vctl pa2 gnd gnd pb1 pa1 pb2 x-spdt switch gaas mmic general description package outline the njg1692nb2 is a gaas x (cross) C spdt(dp4t) swi tch mmic, which is designed for switchin...
Description X-SPDT SWITCH GaAs MMIC

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    NJG1690MD7

New Japan Radio
Part No. NJG1690MD7
OCR Text ... high isolation 37db typ. @f=2.7ghz, p in =0dbm (with balanced mode operation) 29db typ. @f=1.0ghz, p in =0dbm 24db typ. @f=2.0...5. pb2 14. pa1 6. gnd 7. vdd 8. gnd 9. pc2 1 2 3 9 8 7 5 10 ...
Description HIGH ISOLATION X-SPDT (DP4T) SWITCH GaAs MMIC

File Size 264.76K  /  12 Page

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    NJG1684ME2

New Japan Radio
Part No. NJG1684ME2
OCR Text ...ltage at high frequency up to 2.7ghz. in addition, this swit ch is able to handle high power signals. the njg1684me2 has esd protection ...5. vctl2 11. pc 6. vctl1 12. gnd (top view) 10 11 4 3 2 5 12 1 6 7 8 9...
Description HIGH POWER SP4T SWITCH GaAs MMIC

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    NJG1683ME7

New Japan Radio
Part No. NJG1683ME7
OCR Text ... (balanced mode) 47db typ. @f=2.0ghz, p in =0dbm 45db typ. @f=2.7ghz, p in =0dbm low insertion loss 0.35db typ. @f=1.0g...5. gnd 14. gnd 6. p1b 15. vctl2 7. p1a 16. vctl1 8. gnd 17. p3b 9. nc(gnd)...
Description High Isolation X-SP3T (DP6T) SWITCH

File Size 387.30K  /  13 Page

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    EIC1011-8

Excelics Semiconductor, Inc.
Part No. EIC1011-8
OCR Text ...odulation Distortion f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L2 VDS = 10 V, IDSQ 65% IDSS f =11.7GHz Saturated Drain Current VDS = 3 V, VGS = 0 V Pinch-off Voltage VDS = 3 V, IDS = 40 mA 3 Thermal Resistance Caution! ESD sensitive d...
Description 10.70-11.70GHz 8-Watt Internally Matched Power FET

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    Mitsubishi
Part No. MGFS45V2527 S452527
OCR Text 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guara...
Description 2.5~2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
From old datasheet system

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    MGFX39V071711

Mitsubishi Electric Semiconductor
Mitsubishi Electric Sem...
Part No. MGFX39V071711
OCR Text ...onditions ? vds=10v ? id=2.4a refer to bias procedure absolute maximum ratings (ta=25 ? c) symbol parameter ratings unit ...5.6 a igr reverse gate current -18 ma igf forward gate current 36 ma pt *1 total ...
Description 10.7-11.7 GHz BAND / 8W

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